FDD6N50TM-F085 Discrete Semiconductor Products

Gate Charge (Qg) (Max) @ Vgs:	16.6nC @ 10V
Base Part Number:	FDD6N50
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9400pF @ 25V
Vgs (Max):	±30V
Series:	Automotive, AEC-Q101
Vgs(th) (Max) @ Id:	5V @ 250µA
Rds On (Max) @ Id, Vgs:	900 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDD6N50TM-F085 is a Field-Effect Transistor (FET) from Fairchild Semiconductor which operates as a power MOSFET with single dielectric control. It is designed to meet the requirements of RDS(ON) at low and medium voltages with high power dissipation levels. It is offered in an isolated and thermally resilient package, available in a variety of lead count, including TO-220, TO-252 and more. The distinct feature of this MOSFET is that it improves the electrical robustness of the power stage and mechanical strength of a passive transistor. A handy parameter to take note of is the maximum On-State Resistance (RDS(ON)) at which the device switch load current reliably with minimal voltage drop. Compared to a generic power MOSFET, this device limits the switch noise, quiescent current, and temperature rise at the junction by improved design and the superior electrical robustness of the device. This effectively limits the short term and long term reliability issues normally associated with this type of transistor.Among other electrical characteristics, the FDD6N50TM-F085 has a drain current of up to 20A, gate voltage of ±20V with an operating temperature range of -55°C to 150°C. The maximum efficiency obtained from the transistor is between 98% and 99.8% with a minimum PWM switching frequency of 1MHz.The working principle of the FDD6N50TM-F085 is relatively simple. When the MOSFET is off, the drain-to-source (D-S) channel resistance is very large reaching up to 8000 ohm. This effectively isolates the load, thus no current can flow through the circuit and dissipate any energy. When the Gate-to-Source (G-S) voltage is raised, electrons will start to enter the channel densely, thus reducing the drain-to-source resistance. This enables current to flow through the channel, reducing the power loss in the device.The analogy described in the previous paragraph can be easily compared to a water pipe due to its similar resistance characteristics. Consequently, when the gate or control is turned off, no current will flow through the pipe. In contrast, when it is turned on, the difference in electrical potential applied to the gate will create a passage for the current to flow.One of the main application fields for the FDD6N50TM-F085 is its usage in Switch Mode Power Supplies (SMPSs). The transistor operates to modulate the output pulse width, by rapidly switching the gate voltage – thus either maintaining the voltage or controlling its output.In addition, the FDD6N50TM-F085 is widely used in telecommunication systems as a voltage regulator. It works as an adjustable variable resistor in order to control and stabilize the output voltage of the system. In audio systems, the FDD6N50TM-F085 transistor is also important in providing power gain to stages in the audio amplification chain, to drive speakers and other audio elements. The transistor usually operates as a discrete component for controlled voltage amplification as its drain current capacity varies with the gate-source voltage.Finally, the FDD6N50TM-F085 is also employed in automotive and starting applications. Generally, its drain current delivers the power necessary to key on the vehicle’s starter motor. The main advantage of this transistor is its ability to supply higher current compared to a smaller MOSFET operating at similar voltage levels.In conclusion, the FDD6N50TM-F085 is a power MOSFET with single dielectric control and low On-State Resistance. It offers an excellent solution for applications involving low and medium voltage and high power dissipation levels. This includes its usage as a voltage regulator, amplifier, driver and more.

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