FDD6606

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	6 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The FDD6606 is a FS type MOSFET (Field Effect Transistor) designed and manufactured by Fairchild Semiconductor. It is part of their FDD6xxx series of MOSFETs, which are designed to provide high performance and reliability in a wide range of applications. In this article, we will discuss the FDD6606\'s application field and working principle. The FDD6606 is a single-pole double-throw (SPDT) MOSFET with an integrated power Schottky diode, providing a high current switching capability and low on-resistance (RDS (on)). It has an input voltage rating of 20V, making it suitable for use in a variety of different applications, such as DC-DC converters, DC-AC inverters, motor control circuits, and power supply circuits. The FDD6606 is also well-suited for use in high current switching applications, such as in automotive power inverters, power factor correction circuits, and industrial drives.In terms of its working principle, the FDD6606 is designed to be highly efficient, providing a wide input voltage range with minimized switching losses and minimal gate drive to source capacitance. The SPI-type connection of the FDD6606 allows for low gate charge, meaning less energy is required to switch the MOSFET on or off. Additionally, the FDD6606 features an integrated Schottky diode connected in parallel with the source-drain circuit, which helps to reduce switching losses by providing fast body diode recovery during turn-off. The FDD6606 is also designed with built-in overvoltage and overtemperature protection, which helps to ensure its safety and longevity even in demanding operating conditions. An LED indicator is also included, which provides visual indication for the state of the MOSFET, helping to identify any problems before damage is sustained.Overall, the FDD6606 MOSFET is a versatile and reliable device, capable of providing excellent performance in a variety of applications. Its low on-resistance and high switching capability make it ideal for use in high current switching applications, while its integrated Schottky diode and protective features help to ensure it functions reliably even in demanding conditions. The MOSFETs in the FDD6xxx series are effective solutions to a range of design challenges and their versatility makes them a great choice for any application.

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