Allicdata Part #: | FDMA7630TR-ND |
Manufacturer Part#: |
FDMA7630 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6-MICROFET |
More Detail: | N-Channel 30V 11A (Ta) 2.4W (Ta) Surface Mount 6-M... |
DataSheet: | FDMA7630 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1360pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA7630 is a 4-pin dual P-channel silicon-gate power MOSFET commonly used as an electrical switch. This type of MOSFET is used as a power switch or amplifier due to its ability to directly or indirectly control a large amount of power. FDMA7630 is characterized by its high/-low breakdown voltages of 75V/-1V, high operating temperatures of up to 150°C and drain-source on-resistance of 1.3-Ohm. Its inherently low RDS(on) allows the device to operate with low loss and higher efficiency.
The FDMA7630 is typically used in applications that requires a switch or amplifier for high voltage and high-current applications including power supply control, switching and chargers as well as power amplifiers, load switching and general purpose relay driver. This device is also used in motor control circuits such as uninterruptible power supplies, motor drives, servo circuits and other similar applications.
The working principle of a MOSFET is based on using voltage to control the current flow through a channel. The FDMA7630 is a voltage-controlled device, meaning the current through the channel can be controlled by varying the applied voltage on the gate terminal with respect to its source. When voltage is applied to the gate, it modulates the potential barrier between the source and drain, thus allowing current to pass when the right voltage is applied. The current flows in the channel until the voltage on the gate terminal is returned to zero.
The FDMA7630 has a number of features that make it suitable for high voltage and high-current applications. One of these features is its prevalent use of P-channel MOSFET technology. With P-channel devices, the threshold voltage is highest at the drain which makes it ideal for controlling power in high voltage applications. Additionally, the RDS(on) of the FDMA7630 is very low compared to other MOSFETs due to its use of high-quality P-channel technology. Furthermore, this device also has excellent thermal characteristics and can operate in temperatures up to 150°C.
In addition to its features, the FDMA7630 also has many advantages over other MOSFETs. One such advantage is its low on-resistance, which makes it capable of providing good thermal performance. Another advantage is its very high current density which is capable of providing large amounts of current to the load without the need for external circuitry. Furthermore, the reverse body diode behavior of P-channel devices makes them ideal for controlling power in high voltage applications.
The FDMA7630 is an effective, reliable, and cost-effective solution for high voltage and high-current applications. This device is suitable for many different applications and can be used in a wide range of applications. With its low on-resistance and high current density, the FDMA7630 is a perfect choice for applications such as power supply control, switching, and motor control.
The specific data is subject to PDF, and the above content is for reference
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