FDMA420NZ Allicdata Electronics
Allicdata Part #:

FDMA420NZTR-ND

Manufacturer Part#:

FDMA420NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 5.7A MICROFET
More Detail: N-Channel 20V 5.7A (Ta) 2.4W (Ta) Surface Mount 6-...
DataSheet: FDMA420NZ datasheetFDMA420NZ Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMA420NZ is a type of Field Effect Transistor (FET). It is a single MOSFET device which is designed and manufactured to handle low-voltage and high-current operations with a lack of parasiting. This FET is suited for many different applications, including power switching, circuit protection, and in some cases, high-current amplifiers. It has a maximum rated voltage of thirty volts.

When operating, this MOSFET draws a very small amount of input current while providing an increased output current as long as the required power level is supplied. This device is also an excellent choice for low-ripple, high-speed switching applications. The FDMA420NZ has a large gate-source voltage range, allowing it to handle even the small-sized switching operations with very low amounts of power consumption.

One of the most important features of the FDMA420NZ is its working principle. This FET has a surface n-channel which is made up of a source and a drain. The source is what supplies the current to the FET when there is a gate-source potential bias. The drain is used to sink the current from the FET when the gate-source potential is relieved. Between the source and the drain is the gate terminal which is used to control the current flow through the device.

When the gate is positively biased, a channel of electrons forms between the drain and the source. This allows the current to flow through the FET as long as the voltage applied across the source and the drain is within the specified ratings. Conversely, when the gate is negatively biased, the current through the channel is inhibited and the FET behaves almost like an open switch.

When it comes to applications, the FDMA420NZ is ideal for switching sensitive analog circuits, power-switching applications, general-purpose gates, and circuit protection. It can handle up to thirty volts and ten amps. Most notably, it can also be used in some high-current amplifier designs as it can very easily switch large voltages. For this reason, it is an extremely versatile device and can be used in a variety of settings.

In summary, the FDMA420NZ is a type of single MOSFET which can be used in a variety of different applications, including power switching, circuit protection, and even high-current amplifier designs. It functions by forming an electron channel between the source and the drain when the gate is positively biased and by inhibiting the current when the gate is negatively biased. The FDMA420NZ can handle up to thirty volts and ten amps, making it an extremely versatile device.

The specific data is subject to PDF, and the above content is for reference

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