FDMA430NZ Discrete Semiconductor Products |
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Allicdata Part #: | FDMA430NZTR-ND |
Manufacturer Part#: |
FDMA430NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 5A MICROFET |
More Detail: | N-Channel 30V 5A (Ta) 2.4W (Ta) Surface Mount 6-Mi... |
DataSheet: | FDMA430NZ Datasheet/PDF |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA430NZ is a type of field effect transistor (FET) that is used in a wide variety of applications. It is a single-gate FET (simple FET) that works on the principle of modulation by an applied electric field. The FDMA430NZ is an N-type field effect transistor, meaning that it is an active element under forward-biased conditions, meaning that when an electric current is applied from the source to the drain, the FDMA430NZ will conduct and amplify the current, allowing it to control the level of current flow and power. The FDMA430NZ can be used to help regulate and control voltage and current in a number of different settings, including power management systems, motor control circuits, and audio amplifiers, among other applications. Additionally, the FDMA430NZ can be used as a switch in digital circuits, allowing it to convert digital signals into electrical current and allowing it to carry out digital logic functions. One of the key advantages of the FDMA430NZ is its low power consumption. This power saving ability makes it ideal for use in battery-powered products such as mobile phones, digital cameras, and portable navigation systems. Additionally, the FET can be used in noise reduction circuits, where it can help to reduce ‘noise’ in signal processing applications. The FDMA430NZ is constructed using a semiconductor material, such as silicon or germanium, and uses a source and a drain in order to control current flow. The source is the terminal from which electrons enter a system, while the drain is the terminal from which the electrons leave. The FDMA430NZ transistor is based on avalanche breakdown, which occurs when a very high electric field is applied between the source and the drain. When the electric field exceeds a certain level, called the breakdown voltage, the transistor switches on and begins to amplify the current in order to modulate the original signal.
The underlying principle of the FDMA430NZ can be further broken down into three main stages. First, the applied electric field induces an electric current in order to break through the self-induced potential barrier created between the source and the drain. This current is then amplified by the transistor to generate a larger signal. Finally, the transistors switch off and the current decreases to its original level, allowing the transistor to reset itself. This switching off phase is known as the snap-back phase.
Overall, the FDMA430NZ is a highly capable transistor that is able to offer excellent power savings and noise reduction capabilities, making it an ideal solution for a wide range of applications. This includes digital logic functions, motor control circuits, power management systems, audio amplifiers, and noise reduction circuits, among other applications.
The specific data is subject to PDF, and the above content is for reference
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