FDMA530PZ

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FDMA530PZ is a single, dual SO-8 packaged N-Channel MOSFET which is designed to provide high level of power performance, while ensuring reliability and enhanced operation capability. This MOSFET provides both VDS and ID ratings which are among the highest in the industry. It is a pin-for-pin-compatible version of FDMA530NX.

The FDMA530PZ has a number of applications as it is highly efficient in power conversion/regulation. It is used in power supplies and DC-DC converters for charging Li-Ion batteries, secondary-side synchronous rectification in computer motherboards, and the primary-side in isolated motherboard supplies. The MOSFET also finds use in switching rail converters, synchronous rectification controllers, and other applications requiring fast and reliable switching.

The FDMA530PZ features a 55-mΩ RDS(on). This low resistance provides ultra-high efficiency and allows for power loss reductions in power supplies and DC-DC converters. The maximum DC source voltage is rated at 60 V, with an over temperature rating of 142 °C to provide the highest level of performance and Tjmax stability. The FDMA530PZ can be used in two ways, either as high side or low side switches. It has high peak and reliable Surge reliability to ensure live and long life operation.

The working principle of a MOSFET is similar to that of a switch or relay. It is a three-terminal device that acts as an electronic switch and can be used to control current and voltage. A MOSFET operates by creating an electric field that controls the resistance between the source and the drain terminals. This electric field is created by the voltage applied to the gate terminal, which causes the switch to open or close depending on the applied voltage. When a MOSFET is operated in its saturation region, current can flow freely from the source to the drain. When operated in its cut-off region, the channel between the source and the drain is cut off and there is no current flow between the two terminals.

The FDMA530PZ has a maximum drain-source ON-state resistance (RDS ON ) of 55 milliohm, a maximum drain-source OFF-state resistance (RDS OFF ) of 1 GΩ, and a breakdown voltage of 60 V. The device is capable of handling a continuous drain current of 10 A and a peak drain current of 20 A. It features a gate-source breakdown voltage of ±20V and a gate-threshold voltage of 1 V. It is also capable of handling a thermal power dissipation of 147.6 watts at junction to ambient.

In summary, the FDMA530PZ is a single, dual SO-8 packaged N-Channel MOSFET which provides exceptional power performance with high reliability. It is used in power supplies and DC-DC converters, as well as switching rail converters and synchronous rectification controllers. The FDMA530PZ has a maximum RDS(on) of 55-mΩ, a maximum DC source voltage of 60 V, and a thermal power dissipation of 147.6 watts at junction to ambient. The device’s working principle is based on the creation of an electric field between the drain and source terminals, which is controlled by the voltage applied to the gate terminal.

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