FDS6688S Allicdata Electronics
Allicdata Part #:

FDS6688S-ND

Manufacturer Part#:

FDS6688S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 16A 8SOIC
More Detail: N-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS6688S datasheetFDS6688S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS6688S is a type of field-effect transistor (FET) that belongs to the “single” MOSFET type. In this type of transistor, the input signal is applied to one of the electrical terminals of the FET, in order to modulate the width of a channel between the two other terminals. This effectively provides a current flow between those two terminals. The FDS6688S is an integrated circuit (IC) implemented, so it has an ultra-low-power operation specification, as well as a very fast switching speed.

A field-effect transistor works by using the force of an electric field. When a voltage is applied to the base, or control terminal, it creates an electric field between the source and the drain, which modulates the current flowing through the channel. This type of transistor is known as an “enhancement-mode” transistor because its operation requires applying a voltage to the gate to turn it on. In order for the FET to operate properly, the voltage applied to the gate terminal must be greater than the threshold voltage of the FET.

The FDS6688S is typically used for switching and amplification applications. It is ideal for these applications because it has an ultra-low-power operation specification, as well as a very fast switching speed. This makes it ideal for applications that require a response time of a few microseconds or less. Additionally, the FDS6688S has a low voltage capability, allowing it to operate in a large range of applications. This makes it a desirable transistor for applications such as sensor switches, touch screens, and other control systems.

The FDS6688S also has excellent noise immunity, making it ideal for applications requiring noise-free operation. This is especially important for systems that use analog signals, such as analog audio signals. Additionally, the FDS6688S has a very low voltage drift, which ensures that the voltage applied to the gate terminal of the FET remains fairly constant even though the load or supply voltage may change.

The FDS6688S can also be used in voltage regulator designs, as it has excellent performance even at very low input voltages. Additionally, its low on-resistance ensures that it can handle large current loads with minimal loss of power. This makes it ideal for power supply designs and other power regulation applications.

In conclusion, the FDS6688S is a great choice for many different applications. Its excellent performance at low voltages, low on-resistance, fast switching speed, and noise immunity make it ideal for many applications, such as sensor switches, voltage regulators, and power supplies. Additionally, its low voltage drift ensures that its voltage remains fairly constant in spite of changes to the load or supply voltage.

The specific data is subject to PDF, and the above content is for reference

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