FDS6670AS Discrete Semiconductor Products |
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Allicdata Part #: | FDS6670ASFSTR-ND |
Manufacturer Part#: |
FDS6670AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 13.5A 8SOIC |
More Detail: | N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS6670AS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1540pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS6670AS MOSFET is an advanced field-effect transistor designed for power switching applications. It is widely used in communication systems, automotive electronics, intelligent household appliances, as well as in power management and distribution systems. The FDS6670AS is a single, monolithic MOSFET device providing all the necessary gate drive functions for power switching. It has a low charge injection capability, allowing for a low on-resistance and fast switching time. The FDS6670AS offers a variety of features, making it an ideal choice for many applications.
This MOSFET comes with a built-in logic-level gate drive with an input voltage range of 4.5V to 6.5V. It is capable of operating up to 25A drain currents and up to 100V drain-source voltage. The FDS6670AS also has a built-in over-temperature protection and is rated to operate over a temperature range of -40°C to 125°C. Furthermore, it is designed to offer high dynamic and static safe operation area benefits. Its low on-resistance and low charge injection make it ideal for high-power switching applications.
In terms of operating principle, the FDS6670AS transistor works by controlling the current between two terminals, known as the source and drain. The current is controlled by changing the voltage that is applied at a third, or gate, terminal. When a voltage is applied to the gate from an external source, the voltage induces an electric field across the MOSFET, allowing current to flow through the source-drain channel. Depending on the type of MOSFET, the current will flow in one direction or along both directions. The FDS6670AS is a single, unipolar device, meaning it will only conduct current in one direction.
The FDS6670AS offers many advantages over other types of transistors, such as low on-resistance and fast switching time, making it a great choice for many power switching applications. It has a wide operating temperature range, making it suitable for use in many harsh environments, and its built-in over-temperature protection ensures reliable operation. The FDS6670AS is a robust and reliable device, suitable for many demanding applications.
The specific data is subject to PDF, and the above content is for reference
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