FDS6673BZ Discrete Semiconductor Products

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The FDS6673BZ is a fast, low-voltage N-Channel MOSFET designed specifically for low-power applications. As a low-power MOSFET, it is ideal for use in applications such as DC/DC converters, battery management, amplifier, load switches, and more. In this article, we will discuss the application fields and working principle of FDS6673BZ.

The FDS6673BZ has a drain-source breakdown voltage (BVDSS) of 30V and a drain-source on-resistance (RDS(on)) of only 19 mΩ. This makes it perfect for low voltage applications, as the MOSFET can still provide the necessary current with a lower voltage level. Furthermore, the FDS6673BZ features an operate temperature range (Tj) of -40°C to +150°C and an absolute maximum drain current (Ids) of 8A. This allows for a wide range of applications, from automotive applications to portable devices.

As a single N-Channel MOSFET, the FDS6673BZ provides the necessary low resistance and wide voltage range while allowing the user to better control power. This is done through the gate-source voltage of the MOSFET, which allows the user to control the threshold voltage (Vgs) of the MOSFET. This can be used to regulate the current flowing through the MOSFET as well as to prevent over-voltage damage to the device.

The primary application of FDS6673BZ is in battery management. As the MOSFET provides low on-resistance and wide voltage range, it is perfect for use in applications that require high current carrying capacity and low voltage. Furthermore, the low gate charge (Qg) and gate charge (Qgs) of the MOSFET allows for faster switching times, making the MOSFET suitable for applications such as DC/DC converters and motor control.

The FDS6673BZ also has a low gate threshold voltage (Vth), which is beneficial for energy savings in applications such as load switches and amplifier. This makes it ideal for mobile devices and portable applications, where low power usage is essential.

The working principle of the FDS6673BZ is the same as that of any other MOSFET. The MOSFET is composed of three layers—the source, the drain, and the gate—which are insulated by an oxide layer. When a voltage is applied to the gate, the electrons are repelled from the gate and attracted to the drain, forming a channel that allows current to flow between the source and drain. This is the basis of the MOSFET switch and is what allows it to be used in various applications.

The FDS6673BZ is a versatile and highly versatile MOSFET that is ideal for use in low-power applications. It offers a low RDS(on), high drain current, wide operating temperature range, low gate threshold voltage, and low gate charge, making it the perfect choice for battery management, load switches, DC/DC converters, and more. Lastly, the working principle of the FDS6673BZ MOSFET is based on the same basic principles as any other MOSFET.

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