FDS6930B Discrete Semiconductor Products

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FDS6930B is a type of transistor array, which combines two P-Channel Enhancement-Mode MOSFETs together in an ultra-compact package. This transistor array offers a unique combination of features like high input impedance and excellent thermal stability. These features make FDS6930B suitable for a wide range of applications. By carefully selecting the complementary transistors and matching the properties of the Drain/Source leads and gates accurately, a high level of performance can be achieved, up to a certain threshold. This article provides an overview of FDS6930B application field and working principle.

Applications

FDS6930B is mostly used in industry and commercial applications, such as light switches, power supply design, high-power audio amplifiers and automotive systems. Its combination of reliable performance and simple circuit design make it viable for multiple applications requiring heavy current switching. Its ability to handle high frequencies with minimal power loss makes it a suitable choice for power amplifiers and high frequency audio systems. Additionally, its low-power properties make it an ideal choice for portable devices where power conservation is of primary importance.

One of the most versatile applications of FDS6930B is for light switching systems. Its high input impedance and lowvoltage operation make it a great choice for designing systems that are controlled by low level signals but require large amounts of current switching capability. This makes it an ideal choice for light duty and mid-power applications. Its utilization of complementary transistors, combined with its thermal stability, makes it an even more capable choice for applications requiring robust performance with minimal power expenditure.

FDS6930B can also be used in automotive systems. Its highinput impedance combined with its low gate-to-source voltage ensures that it is not affected by EMC radiation levels, an important quality for automotive systems. Additionally, its low-power consumption makes it suitable for usage in vehicles that require long hours of operation before requiring recharging or refuelling. The combination of these features makes FDS6930B an ideal choice for designing ignition systems, battery management systems and other powered-on applications.

Principle of Operation

FDS6930B is a complementary-symmetry transistor array, consisting of two P-Channel Enhancement-Mode MOSFETs and their associated gate, drains and sources. The two transistors are held in an ultra-dense package, allowing for efficient power transfer and low power consumption.

In operation, when a voltage is applied to the gate of the transistor, a current flows through the transistor between its drain and source terminals. The current depends on the voltage applied, and the amount of current that can flow through the transistor is determined by its ‘maximum drain current’ rating. The voltage at the gate is used to determine the amount of current that can flow through the device. This makes the transistor a ‘currentcontrolled’ device, making it suitable for controlling switching applications.

The two transistors arranged in the FDS6930B can be used together to provide a higher switching current, or separately to enable two individually controlled current paths. In complementary-symmetry applications, the two transistors can be used in combination, to enable higher current operation with minimal power loss. This is due to the capacitances in the complementary transistors cancelling out, resulting in a more efficient transistor operation. Additionally, the complementary symmetry configuration also allows the array to be used to provide a higher current with a lower voltage level.

Advantages of FDS6930B

The FDS6930B offers numerous advantages for both commercial and industrial applications, due to its combination of features. Its high input impedance and excellent thermal stability make it highly reliable, allowing it to be used in applications requiring continuous operation with minimal power consumption. Additionally, its integration of complementary transistors allows it to be used in applications requiring higher switching current, without sacrificing power efficiency. Finally, its low gate-to-source voltage makes it immune to EMC radiation, an important quality for automotive applications.

In conclusion, the FDS6930B transistor array is a versatile, efficient and highly reliable choice for many applications requiring heavy current switching. Its combination of features makes it an ideal choice for applications ranging from light-duty industrial to high-powered automotive systems. Its unique capabilities and quality design ensure that it can provide reliable performance in a wide reach of applications.

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