
FDS6375 Discrete Semiconductor Products |
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Allicdata Part #: | FDS6375TR-ND |
Manufacturer Part#: |
FDS6375 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 8A 8-SOIC |
More Detail: | P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SO |
DataSheet: | ![]() |
Quantity: | 12500 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2694pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDS6375 is a MOSFET that belongs to a series of vertical DMOS transistors from Fairchild Semiconductor. The series was designed for low voltage and ultra-low on-resistance, enabling it to operate in a wide range of applications ranging from synchronous rectification in SMPS to automotive, battery and industrial applications.
Applications
The FDS6375 can be employed in various applications where high performance, efficiency, and reliability are key factors. Its ratings make it especially suitable for high-side switching applications in synchronous rectification, DC-DC converters, and motor drives. The device offers improved resistance to external influences such as vibration, temperature, and electromagnetic fields compared to planar transistors. Thanks to its extremely low output capacitance, the FDS6375 has a wide frequency response, allowing it to be used in high frequency applications. It can also be used in battery management systems, automotive powertrain systems and industrial automation.
Working Principle
The FDS6375 is a vertical DMOS transistor, and its structure is based on the source-side vertical DMOSFET (also known as gate-last) technology. This transistor works by applying an electrical signal to the gate to open the drain-source channel, allowing current to flow through it. The drain-source channel is made of a lightly doped n-well region and a source area, both etched into a thicker base layer of p-type material. This base layer acts as a floating body and is separated from the gate electrode by a gate oxide layer. The floating body is capacitively coupled to the gate, meaning that changes in the voltage applied to the gate will be reflected in the floating body. This allows the transistor to open and close in response to the voltage applied to the gate. The FDS6375 also features an integrated body diode that is useful for providing a path from the source to the drain when the transistor is switched off.
In summary, the FDS6375 is a versatile vertical DMOS transistor that can be used in a wide range of applications where high performance and reliability are key. Its structure is based on the source-side vertical DMOSFET technology and its integrated body diode provides a path for current when the transistor is switched off. The FDS6375 is a reliable and cost-effective choice for high-side switching applications in synchronous rectification, DC-DC converters, and motor drives.
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