
Allicdata Part #: | FDS6984ASFSTR-ND |
Manufacturer Part#: |
FDS6984AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5.5A, 8.5A 900... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | PowerTrench®, SyncFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A, 8.5A |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 15V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS6984AS is a Dual N-Channel Enhancement Mode Power MOSFET array primarily used in automotive applications. It is made up of two independent N-Channel MOSFETs integrated into a single package and is a great choice for applications where electrical isolation is desired, such as motor control, power management and automotive. This device has two independent enhancement mode MOSFETs, one with a drain source voltage of 20V and one with a drain source voltage of 60V, both with a drain current of 95A. The gate is controlled by a PWM logic gate.
The FDS6984AS has many applications in the automotive field. One application is as part of a motor control solution. Since it has two independent MOSFETs inside one package, it is convenient to use when controlling motors. With the control of a PWM logic gate, it can be used to control the chips that output the required waveforms for motors. The FDS6984AS can also be used as a power management solution, where it can be used to control the input and output voltages of a system. Furthermore, FDS6984AS can be used to control the temperature of the system by providing a temperature controlled fan system, thus controlling the operating temperature of the system.
The working principle of the FDS6984AS is based on two N-Channel MOSFETs that are integrated in one package. It has a P-Channel MOSFET on the gate which controls the flow of the current. When a logic signal is applied to the gate, electrons will flow in and out of the drain, creating a current flow through the FDS6984AS. The amount of current flowing through the FDS6984AS can be controlled by varying the logic signal on the gate.
In summary, the FDS6984AS is a Dual N-Channel Enhancement Mode Power MOSFET array mainly used in automotive applications. It is comprised of two independent N-Channel MOSFETs integrated in one package and is an excellent choice for motor control, power management and automotive where electrical isolation is desired. The gate is controlled by a PWM logic gate and can be used to control the chips that output the required waveforms for motors. The working principle of FDS6984AS is based on two N-Channel MOSFETs integrated into one package, with a P-Channel MOSFET on the gate that controls the flow of the current.
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