FDS6690A

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The FDS6690A is an advanced N-channel MOSFET manufacturing product developed by Fairchild Semiconductor. It is designed in a standard SuperSOT package which allows for better power efficiency, lower standby power consumption and other features that are extremely important for various applications.With its outstanding combination of low RDs (on) and low drain-source on-state resistance (RDS(on)), FDS6690A is ideal for applications such as load switch, high frequency FETs, DC/DC converters, power management and in other electronics applications.

The FDS6690A is designed to provide high performance and low power consumption in various power switching applications. It has an on-state resistance of 1.5 Ω and an excellent ratio of gate-to-source voltage which improves gate turn-off times and benefits power density in flyback and DC-DC applications. Both of these features combined make it a suitable choice for a wide range of applications.

The working principle of the FDS6690A is related to the way in which it is made. This particular MOSFET is fabricated with for different layers as part of its construction. These layers consist of a source, a gate, a drain and a body. These layers are used to conduct and store charges, allowing current to flow or blocking it when needed. The source and the gate are both connected to a power source. When the gate is triggered, current will flow from the source to the drain, through the body of the FET. This current flow is the basic principle of operation of all MOSFETs.

The FDS6690A is applicable in multiple areas, such as in power switching and lighting applications, motor control, and in high frequency DC-DC converters. Its excellent switching ability and low drain/source on-state resistance make it a suitable choice for applications requiring high power. It has a maximum drain source voltage of 700V, a maximum gate source voltage of 20V and a maximum drain current of 60A. Additionally, it is perfect for applications that are sensitive to ringing and require the implementation of slow switching characteristic.

In conclusion, FDS6690A is a versatile N-channel MOSFET manufactured by Fairchild Semiconductor. Its excellent combination of low RDs (on) and low drain-source on-state resistance (RDS(on)) make it ideal for load switching, power management, high frequency FETs, DC/DC converters and other electronics applications. Its maximum drain source voltage, maximum gate source voltage and maximum drain current are 700V, 20V and 60A respectively. With its outstanding features, FDS6690A is becoming increasingly popular in the electronics industry.

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