FDS6673BZ-F085 Discrete Semiconductor Products

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FDS6673BZ-F085 is a power MOSFET produced by Fairchild Semiconductor. It is a single N-channel device designed for switching applications, where low on-resistance is desired. The FDS6673BZ-F085 can be used in both the direct off-line switching mode power supplies and switch-mode power supplies (SMPS). Apart from its low on-resistance, this device includes a unique thermal shut-down feature, which protects the MOSFET from over-temperature. This feature helps maintain a well-defined switching state, even in challenging thermal environmental conditions. Additionally, the device is offered in a TO-220 package, which is suitable for many practical applications.

The FDS6673BZ-F085 features an N-channel enhancement mode MOSFET, with a built-in Zener diode. The device consists of a Source, Drain, and Gate terminal, which are isolated from each other by a SiO2 insulation layer. The SiO2 layer prevents current flow between the terminals, while allowing voltage to be applied from the Gate to the Source. The gate can be driven from an external voltage source. When a voltage is applied to the gate, it induces a channel of electrons between the Source and the Drain. This channel can be controlled based on the gate voltage to allow current conduction between the Source and the Drain.

In order to achieve a low on-resistance characteristic, the FDS6673BZ-F085 utilizes a combination of the latest Power MOSFET technology, combined with a unique Zener diode structure. The Zener diode is used to provide the gate voltage to keep the MOSFET in its high-current on-state. Off-state is achieved by reducing the voltage of the gate to below the threshold of the device. This combination of technologies allows the FDS6673BZ-F085 to exhibit a very low on-resistance. The low-resistance allows current to flow through the device with minimal losses.

For applications in power supplies, the FDS6673BZ-F085 acts as a two-terminal switch. When the gate voltage is below the threshold, the device is off. When the gate voltage is above the threshold, the device is on. In this state, the MOSFET provides a low-resistance connection between the drain and the source. This connection allows current to flow from the source to the drain, with minimal losses. In addition, the temperature protection feature prevents the device from malfunctioning when the temperature is too high.

In direct off-line switching mode power supplies (SMPS), the FDS6673BZ-F085 is typically used as a rectifying device. This means that the device is used to convert AC voltage to DC voltage. When a voltage is applied to the gate of the device, the FDS6673BZ-F085 will turn on, allowing current to flow from the AC input to the output, where it is rectified to DC. This rectification process is repeated in a cycle, allowing for a greater amount of current to be transferred from the input to the output. The low resistance of the FDS6673BZ-F085 ensures high power transfer efficiency.

In addition to its use in direct off-line switching mode power supplies, the FDS6673BZ-F085 also finds applications in switch-mode power supplies (SMPS). In this application, the device is used as a switching element to control the flow of current in a power supply. The gate voltage of the device is used to control the switching of the MOSFET. When the gate voltage is above the threshold, the MOSFET is on. This allows current to flow from the source to the drain, with minimal losses. When the gate voltage is below its threshold, the device is off, preventing current flow through the device.

The FDS6673BZ-F085 is an ideal device for use in both direct off-line switching mode power supplies and switch-mode power supplies, due to its low on-resistance and built-in temperature protection feature. Its small size and low cost make it attractive for use in many applications, including consumer electronics, automotive electronics and power supplies. Its unique combination of technologies allows it to provide exceptional performance in a variety of fields.

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