FDS6892A

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	7.5A
Rds On (Max) @ Id, Vgs:	18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1333pF @ 10V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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FDS6892A Application Field and Working Principle

The FDS6892A is a four-phase logic N-channel power MOSFET array manufactured by Fairchild Semiconductor. It is designed to be used as a power switch in DC-DC converters, especially in high efficiency and high density power conversion applications.The FDS6892A consists of two N-channel power MOSFETs per phase and contains an on-chip protection circuit. The on-chip protection circuit monitors the gate and drain voltages, and provides early detection of over-voltage and over-current conditions. The logic N-channel MOSFET design facilitates a high-speed switching operation and provides efficient power management in high density systems. The integrated on-chip protection circuit offers superior protection against over-voltage and over-current conditions. The FDS6892A is designed to work with a wide range of input voltage, ranging from 4.5 V to 17 V. It also features a wide operating temperature range of -40°C to 150°C. The input capacitance is low, which allows for a minimal amount of noise. The FDS6892A also has a wide output voltage range of 0 V to 18 V. The FDS6892A has a low on-resistance (RDS(on)) of 34 mΩ. This feature allows for lower power dissipation and better efficiency. The FDS6892A also includes a high side current limit of 5 A. This allows for high current applications. The working principle of the FDS6892A is based on the field effect transistor (FET) structure. The FET is a type of transistor that consists of a gate, a source, and a drain. A voltage is applied to the gate, which modulates the amount of current flowing from the source to the drain. For the FDS6892A, the gate is used to enable or disable each of the four phases. When a voltage is applied to the gate of a phase, the associated MOSFETs will be turned on. When the gate voltage is removed, the associated MOSFETs will be turned off. This allows the FDS6892A to be used as a power switch in high efficiency and high density power conversion applications. In conclusion, the FDS6892A is an ideal choice for high efficiency and high density power conversion applications. The FDS6892A features a low on-resistance, a wide operating temperature range, and a wide voltage range. It also includes a high side current limit and an on-chip protection circuit which provides superior protection against over-voltage and over-current conditions. The logic N-channel MOSFET design allows for high-speed switching and efficient power management.

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