Allicdata Part #: | FDS6672A-ND |
Manufacturer Part#: |
FDS6672A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 12.5A 8SOIC |
More Detail: | N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS6672A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5070pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDS6672A is a P-Channel MOSFET that belongs to the Single family. It is a semiconductor device that is ideally used in applications where load switching and low-level analog switching is required. It operates similarly to a resistor and is constructed with a number of insulated metal oxide layers to form a junction between two electrodes. The primary function of the FDS6672A is to allow or restrict current flow to the load depending on the voltage and current applied to the gate.
The main application field of the FDS6672A is high-side load switching. It can be used in remote shutdown, changing of time-delay sequences, controlling power to an amplifier, as well as in embedded systems, switches and sensors. Another important application of this product is in high-voltage motors, which use the on/off switching of the MOSFET for above or below ground operation.
The FDS6672A has a featured power dissipation of up to 0.6W at 25°C and a channel-to-drain breakdown voltage of 20V. It also offers a low on-state resistance of 4.6Ω, a low input capacitance of 37.6 pF, and an off-state leakage current of 20µA at 50V. These features make the FDS6672A an excellent choice for high-side load switching applications that require low energy usage.
When it comes to the working principle of the FDS6672A, it follows a basic MOSFET operation. When the drain of the MOSFET is supplied with a negative voltage, the Gate-Source voltage will become more positive, which in turn leads to a lower Gate-Source resistance. This causes more current to flow between the source and drain, resulting in higher power through the load. In order to keep the MOSFET in an off state, the Gate-Source voltage must remain more negative than the drain voltage.
The FDS6672A provides low on-state resistance and a high Gate-Source breakdown voltage, which makes it suitable for use in high power and high voltage applications. It is also capable of handling large input capacitance, allowing for smooth switching and fast operation. These features, along with its attractive packaging and user friendly price, make the FDS6672A an excellent choice for engineers looking for an efficient low-level analog switching solution.
The specific data is subject to PDF, and the above content is for reference
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