FDS6162N3 Allicdata Electronics
Allicdata Part #:

FDS6162N3TR-ND

Manufacturer Part#:

FDS6162N3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 21A 8-SOIC
More Detail: N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO
DataSheet: FDS6162N3 datasheetFDS6162N3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5521pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS6162N3 is a single high-speed N-channel MOSFET which has been specially designed for power switching applications. It is capable of working with devices and components found in many applications, such as motor control, power management, and home appliance products. This article will detail the application fields and working principle of the FDS6162N3.

The FDS6162N3 is a power switching device which can handle DC and AC voltages up to 30V. It is designed for a wide range of switching applications, including motor control, current limit control, power factor correction, and AC/DC power management. It is also suitable for use in high-frequency switching applications such as wireless communications, LED lighting, and camera solutions.

This device utilizes an N-channel MOSFET with a maximum on-resistance of 0.0092 Ω @ 10V. The FDS6162N3 has an integrated ESD protection circuit which can protect against electrostatic discharge up to 8 kV HBM. Additionally, the device is equipped with a gate oxide breakdown voltage of greater than 20 V. This provides enhanced reliability when operating under extreme conditions.

The working principle behind the FDS6162N3 is straightforward. When a low-level threshold voltage is applied to the gate, the channel between the source and the drain opens, allowing current to flow through. When the gate voltage is removed, the channel closes and no current is able to flow. This simple operation makes the FDS6162N3 ideal for use in a variety of applications.

The FDS6162N3 has a wide range of application fields, ranging from automotive and lighting systems to industrial automation and solar cells. It is suitable for use in a variety of applications, including signal transmission, motor control, high frequency switching, and current limit control. Furthermore, the device is capable of operating at high speed, making it highly suited for use in wireless applications.

The FDS6162N3 is an ideal solution for a wide range of power switching applications. It is capable of handling DC and AC voltages up to 30V, and has an integrated ESD protection circuit. Additionally, the device has an exceptionally low on-resistance rating, making it well-suited for high-frequency switching applications. Through its simple operating principle, the FDS6162N3 is the perfect device for any application needing reliable and efficient power switching.

The specific data is subject to PDF, and the above content is for reference

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