FDS6576 Allicdata Electronics
Allicdata Part #:

FDS6576TR-ND

Manufacturer Part#:

FDS6576

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 11A 8SOIC
More Detail: P-Channel 20V 11A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS6576 datasheetFDS6576 Datasheet/PDF
Quantity: 7500
Stock 7500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4044pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDS6576 is a high voltage, low threshold, N-Channel MOSFET designed for high speed switching operations. It is a key component in many applications, including motors, power supplies, medical devices, and instrumentation. This article provides an overview of the FDS6576’s application field and working principle.

Application Field of the FDS6576

The FDS6576 is a high voltage, low threshold, N-Channel MOSFET, which has a breakdown voltage range of 5V to 30V, a continuous drain current of 30A, and an on-resistance of 0.02 Ohms. Its high voltage and low threshold makes it suitable for applications like current-control switching and power switching, especially for low-power consumption and high-speed switching operations.

The FDS6576 is typically used in motor control, industrial motor driving, DC/DC conversion, power switching, battery management systems, and other power management applications. It can also be used in medical applications such as labeling, RFID reading, imaging, and monitoring. Additionally, it is used in vibration control, digital rectifier systems, and in automotive applications like active suspension and airbag deployment.

Working Principle of the FDS6576

The FDS6576 is an N-Channel MOSFET, which uses an insulated gate electrode to modulate the flow of electrons among a source, drain, and gate. This type of field-effect transistor (FET) provides low on-resistance and a very high input impedance, making it ideal for high-frequency switching operations. The FDS6576 is designed for operations at very high voltages, allowing the device to switch larger currents with very little power loss.

In operation, the FDS6576 works by allowing current to flow from the source to the drain when a voltage is applied at the gate. The voltage at the gate controls the current flow from the source to the drain, allowing it to be used as a switch. The FDS6576 is designed to turn on very quickly and switch large amounts of current efficiently with minimal power loss, making it ideal for high-speed switching operations.

When the FDS6576 is off, there is no current flow from the source to the drain. However, when there is an electrical potential between the source and gate, current flows from the source to the drain. This current flow can be regulated and controlled using the voltage applied at the gate. The FDS6576 is designed to turn off very quickly and has a high input impedance, which helps to reduce power losses.

Conclusion

The FDS6576 is a high voltage, low threshold, N-Channel MOSFET which is used in a wide variety of applications. Its high voltage and low threshold make it ideal for applications such as motor control, medical applications, and automotive applications. The FDS6576 works by allowing current to flow from the source to the drain when a voltage is applied at the gate and can be used to switch large currents efficiently with minimal power loss.

The specific data is subject to PDF, and the above content is for reference

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