FDS6680AS

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FDS6680AS is a single N-channel FET (Field Effect Transistor) from Fairchild Semiconductor Corporation. It is specifically designed for high-frequency switching applications, such as switches, relays, and protection circuits. The FET is a three-terminal device with a gate, drain, and source. FETs offer superior control compared to other transistors and can be used in a variety of power switching applications, such as motor control, lighting, solenoid control, and more.

FDS6680AS Applications

The FDS6680AS is suitable for use in high-frequency, high current, and high power switching applications. It can also be used to switch sensitive device circuits, such as microcontrollers and analog devices. With its low gate-source threshold voltage (VGS(th)), the FET is suitable for applications requiring very low leakage current without sacrificing performance in other regions, such as switching energy. Additionally, FDS6680AS can be used in a variety of high-frequency applications, including switching power supplies, DC-DC converters, switching regulators, and more.

FDS6680AS Working Principle

FETs are normally-open switches that utilize a voltage instead of a current to control the switch. The FDS6680AS is a single N-channel FET, meaning that one electrical signal is required to turn it on and off. When the gate is left open, the FET is off and current is unable to pass from the drain to the source. However, when an electrical voltage is applied to the gate, the channel between the drain and the source is opened and current can flow. The FDS6680AS has a very low threshold voltage, so it is capable of creating a very low on-state current.

The FDS6680AS also has a very high peak current capability, making it well-suited for high-power applications. This FET also has an extremely low “on-state” resistance, meaning that switching losses are very low. Additionally, the FET can handle high-frequency switching without causing any degradation in performance. This makes the FDS6680AS ideal for high-frequency switching applications.

Conclusion

The FDS6680AS is an ideal choice for high-frequency, high-current, and high-power applications. It requires very little voltage to turn the switch on and is capable of handling high-frequency switching without any degradation in performance. Additionally, the FET’s low switching losses enable it to be used in a variety of power-switching applications, from motor control and lighting to solenoid control and more. The FDS6680AS’s combination of low voltage requirements, high current capabilities, and low switching losses make it an attractive option for many high-frequency switching applications.

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