Allicdata Part #: | FDS6984STR-ND |
Manufacturer Part#: |
FDS6984S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5.5A, 8.5A 900... |
DataSheet: | FDS6984S Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench®, SyncFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A, 8.5A |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1233pF @ 15V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS6984S is an array of 8 N-channel FETs (field effect transistors) in a single package. It can be used as an amplifier, switch, linear regulator, or another type of signal processing device, depending on the application. This device is suitable for a wide range of applications, such as DC/DC converters, motor and lighting control, automotive, industrial, and consumer electronics. The FDS6984S is also available in a variety of packages, such as SOIC (Small Outline Integrated Circuit), TO-3P (Transistor Outline), and TSSOP (Thin Shrink Small Outline Package).
FETs are three-terminal devices composed of a source (S), gate (G) and drain (D) terminals. They are controlled by the electric field applied to the gate terminal. FETs can be classified as either Enhancement or Depletion mode types, depending on the application. The FDS6984S is an enhancement-mode device, which means that the current between the drain and source terminals increases as the gate voltage is increased. The device has gate-source electrostatic discharge (ESD) protection, which can safely absorb up to 2 kV of human body ESD. It also has protection from gate-source undesired turn-on, and drain-source voltage leakage.
The FDS6984S is designed with circuit control pins that can be used to customize the operating parameters of the device, depending on the needs of the application. It provides typical turn-on and turn-off times of 3 and 5 ns, respectively, making it suitable for switching high-frequency circuits. It also has a typical ON-resistance (RDS(ON)) of 10 Ω, making it well suited for current-controlled switching applications.
The FDS6984S works best in a temperature range of -55 to 150°C, making it ideal for applications in harsh environments. Its typical thermal resistance (RthJC) is 2.2 °C/W, which means it can dissipate the heat generated in the circuit quickly. The device is also designed with an integrated ESD protection circuit that can withstand up to 2 kV of ESD.
The working principle of the FDS6984S is based on the enhancement-mode FET. In this type of FET, the gate terminal controls the current flowing between the drain and source terminals. When a positive voltage is applied to the gate terminal, a channel is created between the drain and source terminals, allowing current to flow. The current flowing through the device can be controlled by adjusting the gate voltage.
The FDS6984S array is an integrated solution for applications requiring multiple FETs. The device provides an extremely compact package, as compared to individual FETs, and its integrated ESD protection circuits make it well suited for applications in harsh environments. It is also designed with circuit control pins that allow the user to customize the operating parameters of the device. The device is suitable for use in a wide range of applications, including DC/DC converters, motor and lighting control, automotive, industrial, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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