FDS6982S

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FDS6982S Application Field and Working Principle

The FDS6982S is an n-channel logic level power metal-oxide-semiconductor field-effect transistor (MOSFET) array. It features two independent, electrically isolated N-Channel Power MOSFETs in a single device. This MOSFET array is designed to provide high levels of translation performance, low input leakage, and both high speed switching capability and the ability to handle current loads up to 500 mA. This makes it suitable for a variety of applications including load switches, battery protection, and multiple load power transforming.

The FDS6982S is a two-in-one, dual-gate power MOSFET array, with each MOSFET having its own gate input as well as its own source-drain connection. The two MOSFETs are completely independent from each other, meaning that each MOSFET can be driven at a different voltage, allowing for two totally independent applications. The two MOSFETs share the same drain connection, allowing for simple circuit designs.

At the heart of the FDS6982S is its advanced integrated circuit (IC) technology, which provides both improved performance and greater reliability when compared to other MOSFET arrays. Through this advanced IC technology, the FDS6982S is able to source and sink current up to 500 mA while providing low input leakage (I DS(on) = 10 μA).

The FDS6982S operates in accordance with the common source circuit. The input voltage is supplied to a gate of the corresponding MOSFET, and the resulting current passes through the drain and is connected to either the source or a load. The FDS6982S supports both low side and high side configurations, meaning that an input can be either low or high, thus allowing for either an N-Channel or P-Channel MOSFET to be connected. By having an N-Channel MOSFET as the source, the high side configuration is enabled, while having a P-Channel MOSFET as the source enables the low side configuration.

The FDS6982S also features an over-voltage protection (OV) circuit that protects against voltage surges. The OV circuit monitors the MOSFETs for any excessive drain to source voltages and turns off the corresponding MOSFETs if the voltage becomes too high, thus preventing the MOSFET from becoming damaged.

The FDS6982S is an ideal solution for a wide range of applications such as load switches, battery protection, multiple load power transformers, and more. It can handle high currents and low input leakage, as well as providing efficient operation and protection from damage due to over-voltage conditions.

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