FDS6890A Allicdata Electronics
Allicdata Part #:

FDS6890ATR-ND

Manufacturer Part#:

FDS6890A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 20V 7.5A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Sur...
DataSheet: FDS6890A datasheetFDS6890A Datasheet/PDF
Quantity: 7500
Stock 7500Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The FDS6890A is a depletion-mode MOSFET array developed by Fairchild Semiconductor that is an ultra-low-voltage, low-cost device offering extended input and output voltage range. It is used in a wide range of applications which require low-noise and high-efficiency voltage control.

The FDS6890A is designed to operate at a low voltage of only 0.6V, allowing it to extend the input and output voltage range. This is of particular benefit when operating from a battery and conserving battery life. It also offers extremely low noise operation, with a key advantage being that the device has extremely low audible noise across a wide frequency range.

Another important feature of the FDS6890A is its high efficiency, enabling the device to work in a wide range of applications. The device also has a control pin that is capable of adjusting the gate voltage in order to adjust the drain current. This makes the FDS6890A particularly suitable for low-voltage and low-power applications, such as in motor control and energy management applications.

In terms of its operating principle, the FDS6890A is a depletion-mode MOSFET array. The gate voltage is responsible for controlling the status of the drain-source channel, and adjustments to the gate voltage will affect the drain current. Essentially, the drain-source channel will be turned on when the gate voltage exceeds the threshold voltage, and will be turned off when the gate voltage drops below the threshold voltage. When the device is on, the drain current is determined by the gate voltage and the density of the drain-source channel.

The FDS6890A device can thus be used in applications that require low-noise, high-efficiency and low-voltage electrical control. This includes applications such as motor control, energy management and battery applications, to name a few. The device is also capable of providing a wide range of current, depending on the density of the drain-source channel.

In summary, the FDS6890A is an ultra-low-voltage, low-cost MOSFET array developed by Fairchild Semiconductor. It is designed to operate at low voltages, and offers an extended input and output voltage range. It also has a control pin to adjust the gate voltage and drain current, allowing for low-noise and high-efficiency voltage control. This makes the device suitable for a range of applications such as motor control, energy management and battery applications. The FDS6890A operates using a depletion-mode MOSFET array, and the drain current is determined by the gate voltage and the density of the drain-source channel.

The specific data is subject to PDF, and the above content is for reference

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