FDS6679 Allicdata Electronics
Allicdata Part #:

FDS6679TR-ND

Manufacturer Part#:

FDS6679

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 13A 8SOIC
More Detail: P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: FDS6679 datasheetFDS6679 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3939pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDS6679 Field Effect Transistor (FET) is one of the most popular and widely used types of transistors in the world today. It is a type of three-terminal semiconductor device whose main function is to control the flow of power and charge. This type of transistor can be used for a variety of applications including low-noise amplifiers, switches, and voltage regulators. They offer a variety of benefits such as low-power consumption, low voltage operation, and high-speed response.

The FDS6679 is a high-speed, low-voltage, low-power metal-oxide-semiconductor field effect transistor (MOSFET). This type of FET is specifically designed for low-voltage, low-power applications such as in power control circuits, analog signal conditioning, and digital logic. The FDS6679 is constructed with an insulated gate, where the gate voltage is used to modulate the current flow in the drain and source. The gate driver will vary the voltage on the gate to directly control the amount of current flowing through the device. The source and gate terminals of the FDS6679 are made very small in order to decrease the capacitive turn-on and turn-off times, allowing for high-speed switching.

The working principle of the FDS6679 MOSFET is straightforward. When the gate voltage is high, current flows freely from the source to drain through the device. When the gate voltage is low, however, current is blocked from the source to drain and the transistor is turned “off”. By rapidly switching the gate voltage, the FDS6679 can be used to control the flow of current in an application. This makes them an ideal choice for low-power or high-speed applications, as they can control current flow with minimal power consumption.

The FDS6679 FET is commonly used as an efficient power control switch in a variety of applications, including amplifiers, low-frequency radio frequency amplifiers, LED driver circuits, and digital logic controllers. It can also be used as a voltage regulator, providing a constant output voltage regardless of input voltage fluctuations. Additionally, since it offers low power consumption, it is ideal for low-power applications such as in portable devices. The FDS6679 can also be used in noise suppression circuitry and pulsed power applications, as it offers high switching speeds.

The FDS6679 FET is an extremely versatile and reliable transistor, making it one of the most widely used types of transistors in the world today. Its low voltage and power consumption, combined with its high switching speed, makes it an ideal choice for many different types of applications. It is a must-have for any electronic technician toolkit.

The specific data is subject to PDF, and the above content is for reference

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