| Allicdata Part #: | FDS6990ASTR-ND |
| Manufacturer Part#: |
FDS6990AS |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 30V 7.5A 8SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Sur... |
| DataSheet: |  FDS6990AS Datasheet/PDF |
| Quantity: | 5000 |
Specifications
| Series: | PowerTrench®, SyncFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 15V |
| Power - Max: | 900mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
Description
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The FDS6990AS is a field-effect transistor (FET) array which is suitable for a wide range of applications. It is composed of two N-channel FETs, one P-channel FET, two dual-gate FETs, and two integrated resistors. The FDS6990AS is an important technological advancement in the area of FET arrays. It is capable of providing a wide range of advantages over other types of FET arrays, such as lower power consumption, increased switching speed, and improved signal integrity. In order to understand the basic working principle of the FDS6990AS, it is important to understand the concept of field-effect transistors. A field-effect transistor is composed of two terminals, one source and one drain, which are separated by a thin gate region. When a voltage is applied to the gate, it induces an electric field in the device, which is then used to control the flow of current through the device. The use of two dual-gate FETs in the FDS6990AS allows the device to provide high levels of performance and signal integrity. Dual-gate FETs are composed of two gates, each one able to gate its own signal, allowing for better performance in terms of input signal integrity, frequency response, signal propagation delays, and power consumption. The two integrated resistors in the FDS6990AS are used to provide a measure of signal integrity and stability. The use of integrated resistors in the FDS6990AS allows the device to control the amount of current flowing through the device without impinging on signal integrity. This is an important design feature in terms of signal integrity and power consumption.The FDS6990AS is a versatile device which can be used in a wide range of applications. It is most commonly used in electronic circuits such as power management circuits, audio amplifiers, and signal processing circuits where signal integrity and power consumption are of paramount importance. In summary, the FDS6990AS is an important advancement in the field of FET arrays. It is composed of two N-channel FETs, one P-channel FET, two dual-gate FETs, and two integrated resistors which provide high levels of performance, signal integrity, and power efficiency. The FDS6990AS is a versatile device which can be used in a number of different applications, from power management to signal processing, and is an important tool in many modern electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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