FDS6900AS

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The FDS6900AS are a unique family of monolithic, dual N-channel power MOSFET arrays. They offer the benefits of high reliability, low cost, increased power capability and improved system cost compared to conventional discrete power MOSFETs. The FDS6900AS provides superior performance over several key parameters in a broad range of power supply, motor drive and other switching applications. The devices are designed to minimize on-resistance as much as possible while maintaining a low off-state capacitance. This combination of low on-state and off-state characteristics is ideal for high-frequency, high-speed and low-voltage applications.

The FDS6900AS characteristic is a wide voltage range of low gate threshold and high gate resistance, and an extremely low leakage current of around 10nA. This makes them suitable for applications where voltage levels are low and current requirements are high, such as in a high voltage power supply or a motor drive application. In addition to their low on-resistance and low off-state capacitance, these family of devices have a low turn-on resistance, fast switching speed, and low thermal resistivity for improved device protection and increased efficiency.

The FDS6900AS has a wide range of applications in a variety of power electronics systems. They are typically used in power supply applications as they are designed to minimize conduction losses, reduce thermal losses and maximize efficiency. In motor drive applications, they can be used to control the current in the motor winding, as well as to control the speed and direction of the motor. Additionally, they can be used in temperature control circuits, active filters and many high-speed switching applications.

The working principle of the FDS6900AS is based on a combination of both FETs and MOSFETs. FETs are Field Effect Transistors which use an electric field to control the flow of current. MOSFETs are Metal Oxide Semiconductor Field Effect Transistors which are composed of an insulator (oxide) layer and metallic gate which is used to control the flow of current. The FDS6900AS is a dual N-channel power MOSFET array which combines the low voltage and high current capabilities of both FETs and MOSFETs. As a result, the FDS6900AS provides superior performance for high-frequency, high-speed and low-voltage applications.

The FDS6900AS is a device which is designed with a wide variety of features and capabilities to meet the needs of many different types of applications. In addition to its low on-state and off-state capacitance, this power MOSFET array also has the capability to operate at a wide range of voltages and currents. This makes it an ideal choice for power supply, motor drive and other switching applications. Furthermore, the FDS6900AS has a low gate threshold and low on-resistance to ensure high reliability, low cost and improved system cost. As a result, these devices are an excellent choice for a wide variety of power electronics applications.

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