Allicdata Part #: | FDS86267PTR-ND |
Manufacturer Part#: |
FDS86267P |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 150V |
More Detail: | P-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-S... |
DataSheet: | FDS86267P Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.42996 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1130pF @ 75V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 255 mOhm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDS86267P Application Field and Working Principle
When it comes to FETs, MOSFETs and single transistors, the FDS86267P devices from PD-SOI (PowerDSOI) are becoming increasingly popular. While they may look similar to other MOSFETs and FETs, they are actually designed and manufactured with an innovative new process, the Super Junction (SJ) technology. This technology combined with their robust construction and reliable performance makes the FDS86267P ideal for operations in different areas, such as drivings, switching, and amplifying.
In addition to the excellent performance, the FDS86267P can also be safely integrated into projects requiring higher frequencies due to its low on-state resistance, low gate charge, excellent electrical noise immunity, and low gate-source threshold voltage.
FDS86267P Application Field
The main application field of the FDS86267P devices is power switching. Power switching is primarily used in the automotive, industrial, and consumer goods industries. These devices are used in products like air conditioning units, air bags, DC-DC converters, and motor controls.
The FDS86267P can also be used in industrial applications such as robotics, machinery, and automation. These devices are designed to work in higher frequency and voltage applications, be it AC or DC, making them suitable for a wide range of industrial applications.
In the consumer goods industry, these devices are found in products such as inverters, step-down/step-up voltage converters, programmable logic controllers (PLCs), and industrial control systems. They are suitable for these products thanks to their low voltage losses, low thermal resistance, and high-frequency operation.
FDS86267P Working Principle
The working principle of the FDS86267P is based on a Super Junction (SJ) technology. This technology uses a proprietary process to create a high-performance structure that is both robust and reliable. By using this process, the FDS86267P can switch and amplify power in applications that require higher frequencies and high performance.
The FDS86267P uses two overlapping Conductive Portion Shallow Diffusions (CPSDs) to create a trench between two drain regions. This trench separates the two regions and increases the device\'s reliability. As the voltage between the two drain regions increases, the stronger the drain-source channel becomes, allowing for an increased current to flow.
The FDS86267P also features a low gate-source threshold voltage, which enables it to maintain a low on-state resistance. This allows the device to switch faster, thus reducing switching losses. Furthermore, the FDS86267P also features a low reverse recovery time and low gate charge, allowing for fast, efficient power switching.
Conclusion
The FDS86267P is a versatile device thanks to its innovative Super Junction (SJ) technology and excellent performance characteristics. It is designed to work at high frequencies and high voltages, making it suitable for a wide range of applications, including switching, drivings, and amplifying. Ultimately, the FDS86267P is an excellent choice for operations in the automotive, industrial, and consumer goods industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDS8670 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A 8-SOI... |
FDS8874 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
FDS86252 | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 4.5A 8SO... |
FDS8812NZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 20A 8-SOI... |
FDS8870_G | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITN-Chann... |
FDS86242 | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 4.1A 8-S... |
FDS8638 | ON Semicondu... | -- | 2500 | MOSFET N-CH 40V 18A 8-SOI... |
FDS8947A | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 30V 4A 8SOIC... |
FDS8934A | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 4A 8SOIC... |
FDS8958 | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 30V 7A/5A 8... |
FDS8333C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 30V 8SOICMo... |
FDS8926A | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 5.5A 8-S... |
FDS8962C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 30V 7A/5A 8... |
FDS86141 | ON Semicondu... | -- | 2500 | MOSFET N-CH 100V 7A 8-SOI... |
FDS86140 | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 11.2A 8S... |
FDS86240 | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 7.5A 8-S... |
FDS8958B_G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 6.4A/4.... |
FDS8984_F123 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8-SOICMo... |
FDS8870 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 18A 8SOIC... |
FDS86540 | ON Semicondu... | -- | 1000 | MOSFET N CH 60V 18A 8-SON... |
FDS8842NZ | ON Semicondu... | -- | 2500 | MOSFET N-CH 40V 14.9A 8SO... |
FDS8880 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 11.6A 8SO... |
FDS8882 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 9A 8-SOIC... |
FDS8896 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8SOIC... |
FDS8876 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 12.5A 8SO... |
FDS8817NZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
FDS8449-F085P | ON Semicondu... | 0.0 $ | 1000 | NMOS SO8 40V 29 MOHMN-Cha... |
FDS8690 | ON Semicondu... | -- | 2500 | MOSFET N-CH 30V 14A 8-SOI... |
FDS8449-F085 | ON Semicondu... | 0.32 $ | 1000 | MOSFET N-CH 40V 7.6A 8-SO... |
FDS8984-F085 | ON Semicondu... | 0.44 $ | 1000 | MOSFET 2N-CH 30V 7A 8-SOI... |
FDS8949 | ON Semicondu... | -- | 15000 | MOSFET 2N-CH 40V 6A 8-SOI... |
FDS8858CZ | ON Semicondu... | -- | 30000 | MOSFET N/P-CH 30V 8.6A/7.... |
FDS89161LZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 100V 2.7A 8S... |
FDS8984 | ON Semicondu... | -- | 2500 | MOSFET 2N-CH 30V 7A 8-SOI... |
FDS86106 | ON Semicondu... | -- | 10000 | MOSFET N-CH 100V 3.4A 8-S... |
FDS8447 | ON Semicondu... | -- | 7500 | MOSFET N-CH 40V 12.8A 8-S... |
FDS8978 | ON Semicondu... | -- | 7500 | MOSFET 2N-CH 30V 7.5A 8SO... |
FDS8958B | ON Semicondu... | -- | 22500 | MOSFET N/P-CH 30V 8SOICMo... |
FDS86267P | ON Semicondu... | 0.48 $ | 2500 | MOSFET P-CH 150VP-Channel... |
FDS8813NZ | ON Semicondu... | -- | 12500 | MOSFET N-CH 30V 18.5A 8-S... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...