FDS8449-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDS8449-F085TR-ND |
Manufacturer Part#: |
FDS8449-F085 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 7.6A 8-SOIC |
More Detail: | N-Channel 40V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | FDS8449-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28279 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 7.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS8449-F085 is a high-performance field-effect transistor (FET) designed for various applications. It is capable of providing high power output, high current and operating frequency up to 1MHz. It features superior electrical characteristics, high reliability, and wide temperature range.
The FDS8449-F085 is a N-Channel enhancement mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is operated using body-effect transistors (BETs). This FET has an anode gate, a cathode gate, and a floating drain connection.
The anode gate is biased negatively with respect to the source, while the cathode gate is biased positively. When a negative voltage is applied to the anode gate, the drain-source voltage increases, thus increasing the drain current. On the other hand, when a positive voltage is applied to the cathode gate, the drain-source voltage is decreased, thus decreasing the drain current.
The FDS8449-F085 is typically used in high-power applications such as switching power supplies, DC-DC converters, and motor drivers. It is also employed in various analog and digital circuits such as voltage regulators, inverters, and current amplifiers. It can also be used in switching and pulse applications for communication systems.
The FDS8449-F085 utilizes an advanced technology called Insulated Gate Bipolar Transistor (IGBT) for high-efficiency and high-speed switching applications. The IGBT consists of an on-chip insulated gate electrode and an external electrode or power source. The on-chip gate voltage is applied to the insulated gate electrode, while the external voltage is applied to the power source. When this voltage is applied, the on-gate turns on, thus providing a self-induced high current flow.
The FDS8449-F085 also employs a process called Source-Coupled Logic (SCL) which utilizes independent gate control and low gate drain capacitance. The SCL process provides faster switching speeds, improved device-level noise immunity, and enhanced logic gate performance.
The FDS8449-F085 is designed to operate efficiently over a wide temperature range. It features low on-state resistance, high surge current capacity, low reverse transfer admittance, and low gate charge. It is available in a TO-220AB package, which provides superior thermal characteristics for power semiconductor applications.
The FDS8449-F085 is an ideal choice for use in power switching and control applications for consumer, industrial, and automotive industries. It is capable of providing superior performance in high-current and high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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