Allicdata Part #: | FDS8842NZTR-ND |
Manufacturer Part#: |
FDS8842NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 14.9A 8SOIC |
More Detail: | N-Channel 40V 14.9A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | FDS8842NZ Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3845pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 14.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14.9A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS8842NZ is a single N-channel enhancement mode MOSFET. This device is ideal to be used as a power switch in applications that demand very low gate drive and high switching performance. It features very low RDS(on) for high efficiency, low gate charge and high reliable performance.
FDS8842NZ is capable of switching large currents due to its high current capabilities. This makes it an ideal choice for load switching applications and powering loads requiring large current. Its high voltage endurance and fast switching speeds make it an ideal choice for high power switching applications such as inverters, power converters, and motor controllers.
The most common application area of the FDS8842NZ is high-performance power switching. It is widely used in power applications such as DC/DC converters, multi-cell battery charging and switching in motor drives, and lighting systems. It is also used in high speed switching applications such as motor control, high definition audio output systems, and laser printers.
The FDS8842NZ works on a basic principle where the MOSFET operates as a switch between two terminals when a low voltage is applied to its gate. When no voltage is applied to the gate, it is considered to be “off”. When a voltage is applied, it activates the MOSFET and allows current to flow, turning it “on”. The higher the voltage applied to the gate, the larger the current flowing through the MOSFET.
The FDS8842NZ features a very low on-resistance (RDS(on)) of 30mΩ which allows it to achieve higher efficiency in power switching applications. Its low gate charge (Qg) makes it very suitable for applications that require high switching speeds. Its also features a very low reverse transfer capacitance (Ciss) which makes it ideal in applications with high-frequency switches.
The FDS8842NZ is designed for easy mounting and handling, it has a strong exposed tab that allows for a secure connection. Its high surge current rating makes it suitable in applications with a lot of transient activity and its very low input capacitance helps reduce any noise related issues in applications with high frequency switching. The FDS8842NZ is available in various package options that can suit virtually any application.
In conclusion, the FDS8842NZ is a single N-channel enhancement mode MOSFET that is ideal for use in high-performance power switching applications. It is ideal for load switching and powering loads requiring large current. It is suitable in a wide range of applications and is available in several package options. Its excellent switching performance, low on-resistance, and low gate charge make it an excellent choice for high-performance switch-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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