Allicdata Part #: | FQAF10N80-ND |
Manufacturer Part#: |
FQAF10N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 6.7A TO-3PF |
More Detail: | N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO... |
DataSheet: | FQAF10N80 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 113W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 3.35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The FQAF10N80 is a high-performance, high-voltage, high-speed field effect transistor (FET) which can be used for various applications in the electronics industry. It is a single field effect transistor (FET) with a maximum drain-source voltage (Vds) of 80 volts and a continuous drain current (Id) of 10 amperes. The device is suitable for use in various high-voltage, high-speed signal switching and amplification applications.The FQAF10N80 is a N-channel enhancement-mode field effect transistor (FET) which is fabricated using advanced silicon-gate complementary metal-oxide-semiconductor (CMOS) process technology. The FQAF10N80 consists of two active MOSFETs that share a common gate which allows the device to operate with high-frequency response. As a result, it is suitable for a wide range of high-frequency signal applications including microwave communication systems and digital signal processing (DSP) systems.The FQAF10N80 is designed to operate at a maximum voltage of 80 volts and a maximum continuous drain current (Id) of 10 amperes. The device has a maximum power dissipation (Pd) of 300 watts and a maximum gate-source voltage (Vgs) of 20 volts. The device also features an individual source/drain to drain or source (S/D) adapter circuit which allows the device to be used in a wide variety of circuit configurations.The FQAF10N80 is ideally suited for applications such as switching, amplification, and signal routing. It can be used in circuits requiring the highest level of performance, such as in high-speed signal switching and amplification applications. The device is also suitable for applications where low voltage operation is desired, such as audio amplifiers.The FQAF10N80’s working principle is based on the principle of field effect transistors (FETs). A FET is a three-terminal device consisting of a source, a drain, and a gate. The gate is the component of the FET that controls the flow of current between the source and the drain. The flow of current depends on the voltage applied to the gate.When a voltage is applied to the gate, an electric field is created which induces a change in the underlying oxide layer that acts as an “electronic channel” between the source and the drain. This channel allows current to flow between the source and the drain, depending on the voltage applied to the gate. When the voltage applied to the gate is decreased, the channel height is also reduced and the current flow is decreased as well.The FQAF10N80 is designed to be used in high-voltage, high-performance switching and amplification applications where high-speed and accuracy are desired. It can be used in a wide range of applications, including audio amplifiers, digital signal processing (DSP) systems, microwave communication systems, motor-control systems, power supplies, and power switching applications. The FQAF10N80 is an excellent choice for designers looking for the highest level of performance in their application.The specific data is subject to PDF, and the above content is for reference
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