Allicdata Part #: | FQAF16N25C-ND |
Manufacturer Part#: |
FQAF16N25C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 11.4A TO-3PF |
More Detail: | N-Channel 250V 11.4A (Tc) 73W (Tc) Through Hole TO... |
DataSheet: | FQAF16N25C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 53.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF16N25C is a silicon N-channel enhancement mode power field-effect transistor designed for switching and linear applications. It is produced using the latest technology for optimizing performance, cost and reliability in a surface mount SOT-223 PowerMESH packaging. It is rated for a current of up to 16A and a voltage of 25V.
This particular power field-effect transistor can be used in various applications, from industrial control and power management, to home appliances and renewable energy. It is also suitable for automotive and communications systems, as well as other equipment requiring high power and accuracy in regulated current or voltage. In addition, the FQAF16N25C can be used in active noise control and in auxiliary power supplies where fast response time is required.
The FQAF16N25C power field-effect transistor is a three-terminal device consisting of a gate, a source and a drain. The source is connected to the drain and the voltage applied to the gate controls the current between the source and the drain. When the gate voltage is negative with respect to the source, the transistor operates in an enhanced mode. This results in the current between the source and the drain being increased. Conversely, when the gate voltage is positive with respect to the source, the transistor operates in the cut-off mode, causing the current between the source and the drain to be reduced.
In addition to a voltage controlled gate and source, the FQAF16N25C also has a thermal protection-sensing diode. This diode will detect the temperature of the power transistors and provide additional protection and safety when the temperature goes beyond the specified operating parameters. The thermal protection-sensing diode can be programmed to allow the system to shutdown or enter a Safe Mode when the temperature reaches a predetermined level.
The FQAF16N25C is available in both through-hole (for higher power applications) and surface mount packaging options. When using the through-hole packaging, the lead frame provides additional stability and heat dissipation. The surface mount FQAF16N25C is suitable for both press-fit or reflow soldering processes.
In conclusion, the FQAF16N25C power field-effect transistor is a robust, reliable and cost-effective component for a wide range of applications. It uses the latest technology for optimized performance and reliability and provides excellent protection against over-temperature, over-current and over-voltage conditions. It is available in both through-hole and surface mount packages and is suitable for both press-fit and reflow soldering processes.
The specific data is subject to PDF, and the above content is for reference
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