Allicdata Part #: | FQAF19N60-ND |
Manufacturer Part#: |
FQAF19N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 11.2A TO-3PF |
More Detail: | N-Channel 600V 11.2A (Tc) 120W (Tc) Through Hole T... |
DataSheet: | FQAF19N60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF19N60 is a High-Speed Logic Level N-Channel MOSFET transistor developed by Fairchild Semiconductors. This type of transistor is more commonly referred to as a MOSFET because it uses a Metal Oxide Semiconductor Field Effect (MOSFET) technology. This technology allows for extremely efficient power switching when compared to regular bipolar transistors. The FQAF19N60 is a relatively new type of MOSFET that is being used in a wide range of applications from automotive to consumer electronics.
The FQAF19N60 is rated at a maximum voltage of ±60V and a channel current of up to 1.6A. It is designed to be used in a variety of applications including motor drives and load switching. It is particularly well suited for use in high speed logic level switching because of its low on-resistance and fast switching speed. It also has a high-efficiency operation in low-voltage applications such as synchronous rectifier controls.
As far as its working principle, a MOSFET is a type of transistor that uses two field effect regions to control the current flow. When the gate voltage is increased, the voltage across the source and the drain regions increase - increasing the current flow. Conversely, when the gate voltage is decreased, the voltage across the source and the drain regions decrease, resulting in a decrease in the current flow. The FQAF19N60 takes this principle of decreasing current flow when the gate voltage is decreased and applies it to high-speed logic switching.
At its core, this type of transistor is a three-terminal device. The source is the terminal for the input signal, the gate is the terminal that is used to control the current flow, and the drain is the terminal for the output current. As the gate voltage increases, the charge gain of the transistor increases and the current flow increases. When the gate voltage is decreased, the opposite happens - the charge gain decreases and the current flow decreases. This type of switching is often used in logic circuits because it is fast and efficient.
The FQAF19N60 is a great choice for any application that requires high-speed, low-voltage switching or logic-level switching. Its low on-resistance and fast switching speed make it well-suited for use in high-speed applications. Additionally, its high-efficiency operation makes it a great choice for low-voltage applications such as synchronous rectifier controls. All in all, the FQAF19N60 is an ideal choice for a wide range of applications where fast and efficient power switching is required.
The specific data is subject to PDF, and the above content is for reference
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