FQAF5N90

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQAF5N90 is a single N-channel MOSFET with high voltage, high current and low gate threshold voltage performance. It is made of silicon-carbon alloy and is widely used in many electronic equipment.

The application field of FQAF5N90 is very broad. The device can be used for industrial control, DC/DC converter, motor control, high-performance power factor correction, telecommunications server, etc. It can also be applied to automotive electronics, home appliances, and mobile technology.

The working principle of FQAF5N90 is based on the use of the positive control characteristics of the MOSFET. When the gate voltage is higher than the threshold voltage, the depletion layer is formed between the gate and the channel area, blocking the flow of current. So the current across the drain and source is no longer determined by the drain-source voltage but by the gate voltage. When the gate voltage is lower than the threshold voltage, the depletion layer disappears and the current through the drain and source becomes a function of drain-source voltage.

In terms of performance, FQAF5N90 has very low on-resistance, high current capacity, fast switching speed and low gate charge. It can provide a low-level signal isolation and wide operating temperature range. Besides, the device has a very low threshold voltage and can operate at higher voltages of up to 500V.

In summary, FQAF5N90 is a high-performance single N-channel MOSFET that is widely used in many fields including industrial control, DC/DC converter and motor control. It has good performance characteristics such as low on-resistance, high current capacity, fast switching speed, low gate charge and low threshold voltage. It can provide a low-level signal isolation and wide operating temperature range.

The specific data is subject to PDF, and the above content is for reference