Allicdata Part #: | FQAF7N80-ND |
Manufacturer Part#: |
FQAF7N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 5A TO-3PF |
More Detail: | N-Channel 800V 5A (Tc) 96W (Tc) Through Hole TO-3P... |
DataSheet: | FQAF7N80 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQAF7N80 Application Field and Working Principle
The FQAF7N80 is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-effect Transistor) developed by Toshiba, which is one of the most popular types of MOSFETs. It is suitable for applications in a wide variety of areas, including switching, power management and high speed switching. In this article, we will take a closer look at the FQAF7N80, its application fields and its working principles.
Applications of FQAF7N80 MOSFET
The FQAF7N80 MOSFET has been designed to be used in a variety of applications, most notably in switching applications. When used as a switch, the FQAF7N80 can switch mains voltages up to 600V and it can handle currents up to 9A. The FQAF7N80 is also suitable for switching applications involving high frequency signals, such as in radio frequency amplifiers.
The FQAF7N80 is also often used in power management applications, such as AC to DC rectification, DC to DC converters, lamp dimming and other energy-saving devices. The FQAF7N80 is ideal for these applications because it can handle high voltages and currents, has low power losses and has a high switching speed.
Working Principle of FQAF7N80 MOSFET
The FQAF7N80 MOSFET is a type of N-channel MOSFET, which means that it uses a voltage applied to its gate to control the conductivity of the channel between its source and drain terminals. When a positive voltage is applied to the gate of the FQAF7N80, it increases the conductivity of the channel, allowing current to flow between its source and drain.
When no voltage is applied to the gate, the FQAF7N80 acts as an insulator and no current can flow through the channel. This effect is known as the pinch-off effect, and it is the primary principle behind the FQAF7N80\'s ability to switch on and off with a high speed.
Conclusion
The FQAF7N80 is a popular and versatile member of the MOSFET family, which is suitable for a wide variety of applications. Its key features are its ability to handle high voltages and currents, its low power losses and its high switching speed. Its working principle is based on the pinch-off effect, which is triggered when a voltage is applied to its gate.
The specific data is subject to PDF, and the above content is for reference
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