Allicdata Part #: | FQAF6N80-ND |
Manufacturer Part#: |
FQAF6N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 4.4A TO-3PF |
More Detail: | N-Channel 800V 4.4A (Tc) 90W (Tc) Through Hole TO-... |
DataSheet: | FQAF6N80 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.95 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA6N80 is a high-performance power MOSFET that can be used to substitute standard low RDS(on) MOSFETs. This device is designed to have better electrical and thermal properties than comparable power MOSFETs. As a single MOSFET in the TO-220 package, the FQA6N80 offers proven advantages in all types of switching applications.
Application Field
The FQA6N80 power MOSFET is used in circuits where high current and low ON-resistance capabilities are required. It can be used in various high power and/or power efficiency applications such as automotive applications, digital home appliances, power supplies, servers and gate drives, lighting control systems, motor control, etc. The FQA6N80 can also be used in many motor control and switching power supply applications, due to its high current handling capability and low ON-resistance. It has been designed to offer superior performance under higher switching speeds.
Detailed Overall Operating Principle
The FQA6N80 is a type of field effect transistor (FET) that uses the electric field to control current flow. It is a n-channel MOSFET, which stands for metal oxide-semiconductor field-effect transistor. MOSFETs have three terminals that are the source, the gate and the drain. When the FQA6N80 is activated, it creates an electric field between the source and the drain terminals, where electrons from the source flow through the channel towards the drain terminal, thus conducting the current. The amount of current that flows through the device is dependent on the voltage applied between the gate and source terminals.
When the voltage is applied to the gate terminal, a thin layer of an insulating material called an oxide layer forms around the gate electrode. This forms a capacitance between the gate and the source terminals which is what allows the gate voltage and current to control the channel between the source and the drain. As the voltage between the gate and the source increases, the channel will widen and more electrons will be able to pass through it, increasing the current flowing through the channel and allowing more current to pass through the device.
The main advantage of the FQA6N80 is that it has reduced ON-state resistance, which helps to minimize current losses and heat generated. It also has a better ability to handle higher frequencies, allowing it to be used in applications that require higher switching speeds. The enhanced thermal performance of the FQA6N80 also helps to reduce temperatures in the device and provide better reliability.
Conclusion
The FQA6N80 power MOSFET is used in many power efficiency and switching applications. Its low RDS(ON) allows for better current flow, and it is capable of handling higher switching speeds. Furthermore, the device has enhanced thermal properties, which helps reduce temperatures and ensures better reliability. Ultimately, the FQA6N80 provides excellent performance and is ideal for a variety of power efficiency and switching applications.
The specific data is subject to PDF, and the above content is for reference
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