Allicdata Part #: | FQAF9N50-ND |
Manufacturer Part#: |
FQAF9N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 7.2A TO-3P |
More Detail: | N-Channel 500V 7.2A (Tc) 90W (Tc) Through Hole TO-... |
DataSheet: | FQAF9N50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The FQAF9N50 is a popular enhancement-mode MOSFET that is a single technical component and can be used in various applications. This component is most commonly used in switching power supplies, and it is a common feature of many modern electronics. Additionally, this component can be used to amplify radio frequency signals and as a switch in digital logic circuits. In order to understand the applications and working principle of the FQAF9N50, it is important to first understand the basic electrical principles that are involved in the functioning of this component.The FQAF9N50 is a three-terminal device that consists of a source, gate, and drain, and is made from a metal oxide semiconductor material. This type of material means that the FQAF9N50 is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). This type of component is an unipolar transistor, meaning that it has only one type of carrier for the movement of electrons. As a result, the FQAF9N50 can be used for a variety of applications and is ideal for situations where low power consumption, small size, and high speed are required.In order to understand the working principles of the FQAF9N50, it is important to understand the three-terminal device it consists of. The source is the terminal from which electrons flow out of the device, and is usually connected to the negative terminal of a power source. The gate is the terminal through which electrons can flow back into the device, and is usually connected to the positive terminal of a power source. Finally, the drain is the terminal to which electrons flow out of the device, and is typically connected to a load circuit. When a voltage difference exists between the source and the gate on the FQAF9N50, it acts as an amplifier or a switch for the current flowing between the source and drain. The difference in voltage creates an electric field in the MOSFET, which controls how much current is allowed to flow from the source to the drain. This makes the FQAF9N50 ideal for use as a switch in digital logic circuits as it can turn on and off quickly and precisely. Additionally, the FQAF9N50 can be used as an amplifier in radio frequency circuits as the electric field can control how much signal current is allowed to flow through the device. Due to its wide range of capabilities, the FQAF9N50 can be used in multiple applications. These applications range from power supply switches and digital logic circuits to radio frequency amplifiers. In particular, the FQAF9N50 is well-suited for switching power supplies as it can turn on and off quickly and precisely, allowing it to switch between high and low input current levels with ease. Additionally, the FQAF9N50 is ideal for use in digital logic circuits due to its low power consumption, small size, and high speed. Furthermore, the FQAF9N50 can be an effective amplifier in radio frequency circuits due to its ability to control how much signal current is allowed to flow through the device. The FQAF9N50 can be an incredibly useful device due to its wide range of applications and capabilities. It is particularly useful in situations where low power consumption, small size, and high speed are required. Additionally, the FQAF9N50 can amplify radio frequency signals effectively, allowing it to be used in a variety of radio frequency circuits. This makes the FQAF9N50 an incredibly useful device in the modern electronics world, and is a device that is not restricted to any particular application.
The specific data is subject to PDF, and the above content is for reference
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