Allicdata Part #: | FQAF34N25-ND |
Manufacturer Part#: |
FQAF34N25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 21.7A TO-3PF |
More Detail: | N-Channel 250V 21.7A (Tc) 100W (Tc) Through Hole T... |
DataSheet: | FQAF34N25 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2750pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 10.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21.7A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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。The FQAF34N25 is a type of single MOSFET, a type of transistor. A MOSFET (metal oxide semiconductor field effect transistor) is a type of transistor that uses electrical fields to control current flow. It’s used within electronic devices to control the signal flow. MOSFETs have the advantage of being able to switch the current with a relatively low level of power.
The FQAF34N25 is a simple, single MOSFET. It has a source, a drain and a gate. The device has N-channel, meaning that it has a negative charge carrier. It has a TO-220 package, a common package for integrated circuit components, and a drain current rating of 10A when its supplied with a voltage of 15V. It also has a 30V gate-source voltage range.
The FQAF34N25 is used in a number of applications, including DC to DC power converters, HVAC systems, automotive electronics, power supplies, and DC motors. It can also be used to amplify audio signals and as a power amplifier. It is also used as a switch in home networking systems.
The working principle of the FQAF34N25 is very simple. When the voltage is applied to the gate, it creates a charge, which attracts electrons from the source to the drain. This creates an electric field which attracts more electrons, allowing current to flow between the source and the drain. By applying a small voltage to the gate, the device can be used to open or close the current flow.
The FQAF34N25 is a reliable and simple semiconductor device. It is used in a wide range of applications, and is easy to use. The device is also available in a variety of packages and sizes, making it suitable for a number of applications. The working principle of the device is also straightforward, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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