FQAF34N25 Allicdata Electronics
Allicdata Part #:

FQAF34N25-ND

Manufacturer Part#:

FQAF34N25

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 250V 21.7A TO-3PF
More Detail: N-Channel 250V 21.7A (Tc) 100W (Tc) Through Hole T...
DataSheet: FQAF34N25 datasheetFQAF34N25 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: SC-94
Supplier Device Package: TO-3PF
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 85 mOhm @ 10.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQAF34N25 is a type of single MOSFET, a type of transistor. A MOSFET (metal oxide semiconductor field effect transistor) is a type of transistor that uses electrical fields to control current flow. It’s used within electronic devices to control the signal flow. MOSFETs have the advantage of being able to switch the current with a relatively low level of power.

The FQAF34N25 is a simple, single MOSFET. It has a source, a drain and a gate. The device has N-channel, meaning that it has a negative charge carrier. It has a TO-220 package, a common package for integrated circuit components, and a drain current rating of 10A when its supplied with a voltage of 15V. It also has a 30V gate-source voltage range.

The FQAF34N25 is used in a number of applications, including DC to DC power converters, HVAC systems, automotive electronics, power supplies, and DC motors. It can also be used to amplify audio signals and as a power amplifier. It is also used as a switch in home networking systems.

The working principle of the FQAF34N25 is very simple. When the voltage is applied to the gate, it creates a charge, which attracts electrons from the source to the drain. This creates an electric field which attracts more electrons, allowing current to flow between the source and the drain. By applying a small voltage to the gate, the device can be used to open or close the current flow.

The FQAF34N25 is a reliable and simple semiconductor device. It is used in a wide range of applications, and is easy to use. The device is also available in a variety of packages and sizes, making it suitable for a number of applications. The working principle of the device is also straightforward, making it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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