Allicdata Part #: | FQAF16N25-ND |
Manufacturer Part#: |
FQAF16N25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 12.4A TO-3PF |
More Detail: | N-Channel 250V 12.4A (Tc) 85W (Tc) Through Hole TO... |
DataSheet: | FQAF16N25 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 6.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.4A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF16N25 is a type of Field Effect Transistor, more specifically a type of Metal Oxide Semiconductor Field Effect Transistor (aka MOSFET). It is a single or discrete type FET, meaning that it is composed of a individual transistor element rather than a group of multiple transistor elements.
A FET is a type of transistor that utilizes a electronic field to control current flow within a circuit. The FQAF16N25 is a enhancement type field effect transistor, meaning that current only flows when the gate voltage is greater than the source voltage. This makes it an excellent choice for switching power supply applications, where the gate voltage is expected to remain high for maximum current flow.
The construction of the FQAF16N25 consists of three main components: the Gate, Source, and Drain. The Gate is where the Electronic Field is applied in order to alter the current flow within the transistor. The Gate is considered the control of the FET, similar to how a voltage regulator can be used to control electric current flow. The Source is where electric current will flow from, while the Drain is where electric current will flow to. The Source and Drain are connected with an internal channel, which is where the current is controlled.
The FQAF16N25 is a common choice for DC power supply applications, as it offers high power efficiency compared to other types of FETs. This makes it an ideal choice for applications such as DC motor control, automotive power supplies, and other power electronics applications. The FQAF16N25 can also be used as a low side switch, which is useful in applications where power is needed to be switched off quickly.
The working principle of the FQAF16N25 is quite simple. When the Gate voltage is higher than the Source voltage, the internal channel between the Source and Drain of the FET is opened, allowing electric current to flow from the Source to the Drain. When the Gate Voltage drops below the Source Voltage, the internal channel is closed, cutting off the flow of electric current.
The FQAF16N25 is a versatile and reliable FET, and can be used in a wide range of applications. From DC power supplies to automotive power systems, the FQAF16N25 is an ideal choice for many applications due to its excellent power efficiency and ability to switch power quickly. It offers the design engineer a great deal of flexibility, making it a desirable choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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