FQAF11N90

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	SC-94
Supplier Device Package:	TO-3PF
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	94nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	960 mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQAF11N90 Application Field and Working PrincipleThe FQAF11N90 is a field-effect transistor (FET) designed to use in power electronics applications. It is an electronic semiconductor device used to control the amount of current flowing through it. It is a three-terminal device, with two controlled (gate and drain) and one uncontrolled (source).Unlike bipolars, with FETs it\'s the voltage applied between the gate and the substrate which decides the amount of current that can be passed through the drain and source terminals. FETs are classified into two broad categories, here represented by the first letter of their name (even though intermediate variations may exist). The two broad categories are "FET\'s" (Field-effect Transistors) and "MOSFETs" (Metal Oxide Semiconductor Field-effect Transistors).The FQAF11N90 belongs to the Single MOSFET category. It is an enhancement-mode enhancement-mode insulated-gate FET (IGFET) ideal for high-density and pulse-width modulated (PWM) applications, high-efficiency power supply designs, relay- replacement applications and energy-management systems. With its low power dissipation and high output current capacity, it provides high reliability and good performance in both static and dynamic environments. It comes in an automatically-activated package which eliminates the need for external circuitry to activate the FET.In a nutshell, the working principle of a FET is similar to a mechanical switch, since it controls the flow of current when activated or deactivated. The main difference is that instead of having a mechanical switch, the FET uses an electric field controlled by the input voltage applied to the gate terminal to switch on or off the current. When the gate is charged to a positive voltage, the electric field generated attracts electrons from the source to the drain and the FET is in the conductive state. If the voltage applied to the gate is low or 0V, then the FET turns off and does not allow the current to flow through it.The FQAF11N90 FET is available in a TO-220 package and has a drain-source on resistance of 0.031 ohms, a maximum drain-current of 25 Amps, a gate threshold voltage of 3.2V, a maximum drain-source voltage of 30V and a maximum junction temperature of 175°C. The FET is suitable for a wide range of power electronics applications, from automotive to industrial and consumer applications. When it comes to applications, the FQAF11N90 can be used in switching power supply design to regulate the voltage applied to the load. The regulating effect is achieved by using a high-frequency switching frequency together with high-current-handling capability and low gate-charge, allowing for highly efficient energy transfer. It can also be used in low-energy solutions, such as lighting, cooling, heating and power factor correction (PFC). The MOSFET also finds great application in electronics which include energy management systems, reverse battery protection, buck and boost voltage converters, motor control systems, relays and alarm systems.In conclusion, the FQAF11N90 FET is a highly reliable and efficient device with a low power dissipation and high output current capacity. It is suitable for a wide variety of applications in power electronics and allows for efficient energy transfer in switching power supply designs. Its built-in protection from over temperature and over-current makes it suitable for use in low-energy solutions, making it an ideal component in applications dealing with heating, cooling as well as lighting.

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