Allicdata Part #: | FQAF6N90-ND |
Manufacturer Part#: |
FQAF6N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 4.5A TO-3PF |
More Detail: | N-Channel 900V 4.5A (Tc) 96W (Tc) Through Hole TO-... |
DataSheet: | FQAF6N90 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF6N90 is a type of single N-channel MOSFET, ot Metal-Oxide-Semiconductor Field-Effect Transistor. It’s used primarily for applications requiring high performance, high temperature operation, and low power consumption. This type of device is popular for its strength, wide operating range, and its ease of use.
The FQAF6N90 is specifically designed for high efficient and very low power switching applications where it’s important to minimize secondary power losses. It is well suited for those applications requiring lowest power losses, such as in LED backlighting systems, telecoms, and consumer applications.
A basic understanding of MOSFETs is important to understand the FQAF6N90’s application field and working principle. First, MOSFETs are based on a type of electric field-effect transistor. They are used in many different applications and are one of the key components used in designing integrated circuits. The MOSFET’s main components are two metal plates a fixed distance apart, insulated by a layer of metal-oxide-semiconductor material placed between them.
The metal plates act as the gate, or control terminal. This is responsible for controlling current flow passing through the device. One metal plate, or source, is called the source terminal and the other, or drain, is called the drain terminal. Electric current passes from source to drain as its voltage difference increases. This current is determined by voltage applied to the gate terminal, which controls the flow of current between source and drain.
The FQAF6N90 is a form of MOSFET specifically designed for its high power dissipation at low voltages. It also has low losses in comparison to classic MOSFETs and its threshold voltage increases with temperature allowing for a higher operating voltage. This is achieved by using a field oxide diode structure which allows for better Qg values and lower leakage current when compared to traditional MOSFETs.
The FQAF6N90 features ultra-low on-resistance of only 8.5 milliOmhs. Its excellent switching performance is characterized by low switching losses due to its very low turn-on and turn-off times allowing for improved energy efficiency. Additionally, it also features low gate charge allowing for improved switching speed, making it ideal for high speed applications.
The FQAF6N90 is well suited for applications up to 100 kHz in the low power switching market. It offers low gate charge and low gate input capacitance, making it ideal for use in high frequency applications such as motor control and switching power supplies. It is also suitable for high frequency, high power, low voltage, and/or medium current applications.
In sum, the FQAF6N90 single N-channel MOSFET is designed for applications requiring high performance, high temperature operation and low power consumption. Its features include ultra-low on-resistance, low gate charge, and low power losses, making it well suited for those applications requiring lowest power losses, such as in LED backlighting systems, telecoms, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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