Allicdata Part #: | FQAF19N20L-ND |
Manufacturer Part#: |
FQAF19N20L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 16A TO-3PF |
More Detail: | N-Channel 200V 16A (Tc) 85W (Tc) Through Hole TO-3... |
DataSheet: | FQAF19N20L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF19N20L is a P-Channel Power MOSFET Transistor that is useful in a wide range of applications. It has a drain current rating of 19 amperes, a drain-source voltage rating of 20 volts, a drain-source on-resistance of 0.58 ohms, and a gate-source threshold voltage rating of 2.5 volts. With its low on-resistance and high drain current capacity, the FQAF19N20L can be used to replace traditional N-Channel MOSFET Transistors in many practical applications, with the added advantage of lower power dissipation.
The FQAF19N20L is a Field-Effect Transistor, which means that it is a type of transistor that operates by controlling the current flowing between the drain and source by applying a voltage to the gate terminal. FETs are basically three-terminal devices, with the drain, the gate, and the source all connected to each other in a single circuit. The gate voltage determines the channel resistance between the drain and source, which is known as the channel, causing a current to flow between the drain and source terminals.
When a negative voltage is applied to the gate of the FQAF19N20L, the channel between the drain and source terminals is opened, allowing a current to flow. In this way, the FQAF19N20L can be used as an on-off switch, controlling the flow of current from the source to the drain. In addition, when higher voltage levels are applied to the gate, the channel resistance can be decreased, allowing for higher current flow.
The FQAF19N20L can be used for a variety of practical applications, such as in switching power supplies, motor control circuits, lighting control circuits, and other switching applications. The FQAF19N20L can also be used to regulate the voltage applied to a load, by using the drain-to-source resistance to vary the current flow according to the voltage applied to the gate. This can be used in applications where it is necessary to control the output voltage more precisely than with simple resistors.
The FQAF19N20L can also be used in audio applications, such as preamplifiers and Darlington pair emitter followers. The low on-resistance of the FQAF19N20L allows it to be used as a linear amplifier, with minimal distortion, and the high current capacity makes it suitable for use in higher-power audio applications. In addition, the FQAF19N20L can be used to control digital signals, such as the address and data buses in microcomputers.
Overall, the FQAF19N20L is a versatile and reliable transistor that can be used for a wide range of applications. Its low on-resistance and high drain current make it the ideal choice for applications that require reliable switching, or precise voltage regulation. In addition, it is suitable for use in audio and digital applications, making it a very useful and efficient device.
The specific data is subject to PDF, and the above content is for reference
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