Allicdata Part #: | FQAF70N15-ND |
Manufacturer Part#: |
FQAF70N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 44A TO-3PF |
More Detail: | N-Channel 150V 44A (Tc) 130W (Tc) Through Hole TO-... |
DataSheet: | FQAF70N15 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQAF70N15 is a fields effect transistor (FET) that belongs to the single MOSFET family. It is a vertical symmetrical power device with a typical drain current rating of 70 mA and a maximum drain-source voltage rating of 150V. This FET can be used in a variety of applications in which power switches and voltage regulators are needed. These applications include motor control, audio amplifiers, and power supplies.
The FQAF70N15 is basically a voltage-controlled field-effect transistor. That is, its output current or voltage is determined by the voltage level applied to its gate. In order to work properly, this device requires a low-voltage DC supply to power the gate, which allows it to control the signal or power stream that it is regulating. Additionally, the FQAF70N15 has a very low gate-source capacitance, allowing it to switch very quickly between low and high output states.
The FQAF70N15 works on the principle of using an electric field to control the movement of electrons in a semiconductor material. In a typical MOSFET circuit, the gate of the transistor is connected to a low-voltage DC power supply. By increasing the voltage of this power supply, the electric field around the gate increases, which attracts electrons into the gate region. This in turn lowers the resistance of the channel, allowing the output current or voltage to flow freely through the device.
The FQAF70N15 is a versatile device that can be used in many different applications. By combining its low gate-source capacitance with its wide range of drain-current and drain-source voltage ratings, this device can handle a variety of power levels, from low-voltage DC levels to high voltage pulsed currents. Additionally, the FQAF70N15 can be used in high input impedance amplifiers, as well as in switching applications that require very fast turn-off times. This combination of features makes the FQAF70N15 an ideal choice for many electronic applications.
In summary, the FQAF70N15 is a single MOSFET FET that offers a number of useful features and wide range of operating characteristics. It is well-suited for a variety of applications, such as motor control, audio amplifiers, power supplies, and high input impedance amplifiers. Additionally, the device has a low gate-source capacitance that allows it to switch between low and high output states very quickly, making it an ideal choice for applications that require very fast turn-off times. With its versatile range of characteristics and wide range of operating conditions, the FQAF70N15 makes an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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