Allicdata Part #: | FQAF8N80-ND |
Manufacturer Part#: |
FQAF8N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 5.9A TO-3PF |
More Detail: | N-Channel 800V 5.9A (Tc) 107W (Tc) Through Hole TO... |
DataSheet: | FQAF8N80 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.9A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF8N80 MOSFET is a single N-Channel Field-Effect Transistor (FET) used in switching and amplification applications. It is an enhancement-mode FET that operates as a low-side switch, ideal for use in many digital logic circuits.
An FET is a type of transistor that uses electrical signals to control current flow. Unlike a bipolar junction transistor (BJT), which can be used as either a switch or an amplifier, the FET is designed specifically for low voltage and low current applications. An FET is composed primarily of two terminals, a source, and a drain. When a voltage is applied between these two terminals, a thin layer of material, called a gate oxide, is formed between them, allowing current to flow around the oxide layer. This current is called the channel current.
The FQAF8N80 MOSFET is designed for switching and amplification applications and can be used to switch loads of up to 15A at VDS = 60V. The on-resistance of the device is typically 15mΩ, with a maximum of 35mΩ. The FQAF8N80 has a maximum drain-source voltage of 60V and is available in both through-hole and surface mount packages.
The working principle of the FQAF8N80 MOSFET is based on the “body effect”, which is the phenomenon of the junction voltage increasing as the current through a junction increases. When a voltage is applied to the gate of the FET, the voltage creates a small electric field between the source and drain. This electric field, in turn, modulates the body effect, which allows the source-drain current to be modulated by the gate voltage, thus allowing the device to act as a switch.
In addition to its low voltage and low current switching characteristics, the FQAF8N80 is also ideal for protection and current limiting. As the gate voltage is increased, the source-drain current is limited, providing protection against high voltage/current conditions. The FQAF8N80 can also be used as a current limiter, by setting the gate voltage to limit the maximum current flow.
The FQAF8N80 is a versatile and reliable device, making it ideal for many digital logic and switching applications. It can be configured to operate as either a switch or an amplifier, making it a great choice for both high and low voltage/current applications. The device is available in both through-hole and surface mount packages and is the perfect choice for many industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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