FQAF11N40

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQAF11N40 is a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) designed for high-power applications. It is a single-discrete MOSFET specifically designed for operating in extreme temperature and voltage environments. The FQAF11N40 is constructed using a Monolithic Dielectric Substrate and is capable of operating at input voltages up to 50V with a breakdown voltage of 11V. The FQAF11N40 features a maximum continuous drain current of 40 amps, and a maximum breakdown voltage of 11V. This makes it ideal for use in high power applications such as switching DC-DC converters, rectifiers, and other power supplies. In addition, the FQAF11N40 also has low gate charge and low gate-to-drain capacitance and low on-resistance, making it suitable for high speed switching operations. The FQAF11N40 is a N-channel MOSFET (NMOS), which means that it is composed of an N-type source and a P-type drain and is designed to pass electrical current from the source to the drain in the desired direction. It achieves this by utilizing a P-type depletion region which forms a depletion region on the N-type material. N-channel MOSFETs are often used as switches in electronic circuits in order to control the flow of current through the circuit. This can be used for a variety of purposes, for example, switching on and off electrical loads, controlling the level of voltage applied to the load, or controlling the output of other devices. The FQAF11N40 works by controlling the flow of electrons when a voltage is applied to the gate. A small voltage applied to the gate, such as 3 volts, will trigger the charge carriers from the source area to the drain area and form an inversion layer. This allows the current to flow from source to drain. The FQAF11N40 will work with a positive voltage and a negative voltage both, and this makes it more versatile.The input resistance of the FQAF11N40 is extremely high and the capacitance between gate and drain is extremely low. This combination of properties allows the FQAF11N40 to be used in high speed switching applications, such as switching Mode Power Supplies (SMPS). The FQAF11N40 can also be used to switch high frequency digital signals, as it is low capacitance, epoxy molded and has a high withstand voltage. The FQAF11N40 is a great choice for high power switching applications due to its low on-resistance, low gate charge and high operating temperature range. It can be used in switching DC-DC converters, rectifiers, boost and buck converters, and more. Its high withstand voltage and low capacitance allows it to be a great choice for high speed switching applications as well.Overall, the FQAF11N40 is a great choice for high power switching applications. It is a single-discrete MOSFET with a high operating voltage and temperature range, low on-resistance, and low gate charge. This makes it ideal for use in high power applications such as DC-DC converters and rectifiers. It can also be used for high speed switching applications due to its low capacitance and epoxy molded structure.

The specific data is subject to PDF, and the above content is for reference