Allicdata Part #: | FQAF19N20-ND |
Manufacturer Part#: |
FQAF19N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 15A TO-3PF |
More Detail: | N-Channel 200V 15A (Tc) 85W (Tc) Through Hole TO-3... |
DataSheet: | FQAF19N20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQAF19N20 is a field effect transistor (FET) available as surface mount device, which uses N-Channel technology to facilitate a variety of switching and amplifying operations. This type of FET has many applications, such as in switching power supply, radio circuitry, and switching amplifiers for audio equipment and other electronic applications. FQAF19N20 is ideally suited for use in a wide range of industries due to its long operational life, reliable output and efficient operation.
The FQAF19N20 is a four-terminal active device operated as a voltage parameter. It can function as an amplifier, pulse-width modulator, and sample-and-hold. The four terminals are the gate, Drain, Source, and Substrate. All the terminals are connected to a single integrated circuit substrate.
The main application of FQAF19N20 is in switching power supplies and radio circuitry. The device is able to handle the large amounts of current necessary for the various radio and power supply applications. The FQAF19N20 also handles the transfer of power from one node to another efficiently and quickly. The device is also able to handle duties in the range of -50 degrees Celsius to +150 degrees Celsius.
FQAF19N20 is a metal oxide semiconductor field effect transistor (MOSFET). The metal oxide is used to create an insulated layer between the gate and the drain and source so that current can flow without a direct connection between the terminals. The metal oxide is also resistant to electrical breakdown, making the device more reliable. The metal oxide also results in the FQAF19N20 having less capacitance than other FETs.
FQAF19N20 has different operation modes. It can be used as a voltage operated switch using the gate voltage to control the resistance between the drain and source, or as a current operated switch using the drain current to control the gate. The device is also able to operate as an amplifier, where the power output is proportional to the input voltage.
FQAF19N20 is well-suited for a wide range of applications due to its flexibility and efficiency. It can be used to control the flow of current in various situations, such as radio circuits, switching power supplies, amplifier design, and audio equipment. It is also adept at transferring power from one node to another efficiently and quickly. Additionally, it is a reliable device with a long operational life, making it well-suited for a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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