FQAF58N08 Allicdata Electronics
Allicdata Part #:

FQAF58N08-ND

Manufacturer Part#:

FQAF58N08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 44A TO-3PF
More Detail: N-Channel 80V 44A (Tc) 85W (Tc) Through Hole TO-3P...
DataSheet: FQAF58N08 datasheetFQAF58N08 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SC-94
Supplier Device Package: TO-3PF
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 24 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQAF58N08 is a type of single N-channel power MOSFET that is designed and built by Fairchild Semiconductor. The FQAF58N08 takes a wide range of input voltage and has a wide drain current capability. It also has low on-resistance, fast switching times, and good noise immunity, making it a superior choice for many applications.

The FQAF58N08 can be used for a variety of applications, including switching, power factor correction, power supply control, lighting control, motor control, and load switching. It is also suitable for low-frequency switching applications, such as LED backlighting, desktop and laptop power supplies, as well as motor control and power switching applications.

The FQAF58N08 is a Through-Hole (TH) type package, meaning that it does not require a printed circuit board for mounting. Instead, it can be easily mounted onto a host component\'s chassis. This makes it an ideal choice for applications where space is limited or the board layout is complex.

The FQAF58N08\'s working principle is based on the basic principles of field effect transistors (FETs). FETs use an electronic field to modulate the flow of electricity through them. The FQAF58N08 features an N-channel FET, which means that the electric field is concentrated on the interior of an N-shaped structure. This creates an easy flow of electrons, allowing the FQAF58N08 to control and switch large amounts of electricity with high efficiency.

The FQAF58N08 is able to handle up to 25 volts and up to 6 amps of current. It also has a fast switching speed of 8.3 nanoseconds making it a suitable choice for certain high-speed switching applications such as Arc Welder power control, Automated Guided Vehicle control, and High-Frequency Inverter for UPS.

The FQAF58N08 is a cost-effective solution for many applications due to its low on-resistance, high-speed switching capability, small footprint, and high reliability. It is also an environmentally friendly solution, as it produces less electromagnetic interference than other MOSFETs, and is RoHS-compliant.

In summary, the FQAF58N08 is a single N-channel power MOSFET that is ideal for a wide variety of applications. It has a wide range of input voltage and high current capabilities, as well as low on-resistance, fast switching times, and good noise immunity. It can be used in a multitude of applications, such as switching, power factor correction, power supply control, lighting control, motor control, and load switching. Its fast switching speed and small footprint make it an ideal choice for applications where space is limited or the board layout is complex. It also produces less electromagnetic interference than other MOSFETs, making it a more environmentally friendly solution. The FQAF58N08 makes an excellent choice for a variety of applications due to its features and its ability to handle high voltages and currents.

The specific data is subject to PDF, and the above content is for reference

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