Allicdata Part #: | FQAF17P10-ND |
Manufacturer Part#: |
FQAF17P10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 12.4A TO-3PF |
More Detail: | P-Channel 100V 12.4A (Tc) 56W (Tc) Through Hole TO... |
DataSheet: | FQAF17P10 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 6.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.4A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF17P10 is a fast diode-connected MOSFET which is widely used for power management applications in a variety of industries. The device has a drain-source on-resistance of 0.0037 ohm, negligible gate charge, fast switching speed, and low gate threshold voltage (Vgs). All of these features make it an ideal choice for various power applications.
The FQAF17P10 is a single n-channel enhancement-mode Field-Effect Transistor (FET). It has an enhancement-mode gate-source structure with a drain-source voltage, Vds, of 150V. The FQAF17P10 is also typically used in power devices, such as power-intensive load switches, in voltage regulators, and also in high-power, high frequency switching applications. It is a general-purpose power MOSFET that can provide excellent performance in both low-voltage and high-voltage applications.
The FQAF17P10 has two terminals, the gate and the source. The gate is connected to the drain through a diode. When a voltage is applied to the gate, a current is induced in the drain and the source, creating a drain-source current, Ids. This current is proportional to the applied gate voltage, Vgs, and also depends on the channel resistivity. When Vgs exceeds the threshold voltage of the device, it turns on, allowing for conduction and carrying the current. This device can switch on and off at very high speeds, and is capable of reaching high frequencies, making it very useful in high-frequency applications.
When working in the saturation region, the drain current is controlled by the gate-source voltage, Vgs. The drain current, Ids, is also proportional to the drain-source voltage, Vds. On the other hand, in the linear region, Ids is a linear function of Vds, with the gate-source voltage, Vgs, controlling current gain. This means that the FQAF17P10 can be used to design circuits with adjustable currents and voltages, making it an ideal choice for many circuits.
The FQAF17P10 has a low threshold voltage and low gate charge, which makes it suitable for switching higher-end devices that require high-frequency operation. Its low on-resistance also enables it to drive high-power devices while maintaining good efficiency. Its wide range of applications means that it can be used in every aspect from simple power management to high-frequency applications.
The FQAF17P10 is widely used in many applications and can be used for a wide range of applications, such as power management, motor control, and high-power applications, etc. It is one of the most popular FETs and is used in various industries. Thus, the FQAF17P10 is an excellent choice for applications requiring low power losses, high switching speed, and low input bias current.
The specific data is subject to PDF, and the above content is for reference
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