Allicdata Part #: | FQAF28N15-ND |
Manufacturer Part#: |
FQAF28N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 22A TO-3PF |
More Detail: | N-Channel 150V 22A (Tc) 102W (Tc) Through Hole TO-... |
DataSheet: | FQAF28N15 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 102W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQAF28N15 is a N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in an ever-growing list of industrial applications. It is particularly popular due to its high current carrying capacity, low on-state resistance and excellent switching characteristics.
Application Field
The FQAF28N15 can be used in a variety of applications including power amplifiers, power supplies, motor control, audio amplifiers and other large current applications. It is highly favored for its ability to handle large currents without breaking down. It also offers excellent noise immunity and low switch-on times, making it suitable for high speed switching applications. In addition, its high-frequency operating range makes it suitable for frequency control applications.
Working Principle
The working principle of the FQAF28N15 is based on the principle of MOSFETs. In a MOSFET, the basic device consists of a barrier layer, known as the gate oxide, between the source and the drain. The FQAF28N15 uses a vertical DMOSFET structure, which helps increase its current carrying capacity. When a voltage is applied to the gate, it forms an electric field between the source and the drain, allowing current to flow. By varying the voltage on the gate, this electric field can be varied, which then allows the device to control the current flow.
The FQAF28N15 has excellent switching characteristics and can be used in various switching and driving applications. Its excellent current carrying capacity, low on-state resistance and high switching speed make it ideal for these applications. In addition, the FQAF28N15 also has excellent thermal performance, making it suitable for high temperature applications.
Conclusion
The FQAF28N15 is a versatile device that finds wide applications in various high current and frequency control applications. Its excellent current carrying capacity, low on-state resistance and excellent switching characteristics make it highly suited for high speed and high temperature applications. Furthermore, its precise control and excellent thermal performance make it an ideal solution for various high-powered applications.
The specific data is subject to PDF, and the above content is for reference
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