FQB10N20TM

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FQB10N20TM is a type of single MOSFET (metal–oxide–semiconductor field-effect transistor) that is commonly used for power management in various applications. It is basically a three-terminal device with a source, a drain, and a gate electrode. It operates by using an electric field to regulate the conductivity of a channel between the source and the drain. This enables the current to be accurately controlled with a minimal amount of power.

The single MOSFET comes in both through-hole and surface mount variants and is used in a wide range of applications that include switch mode power supplies, motor control, and DC-DC converters. It can also be used in RF amplifiers, as well as in logic-level functions. The FQB10N20TM is typically rated for a maximum power dissipation of 10 watts, a maximum drain-to-source voltage (VDS) of 200V and a drain current of 20A.

FQB10N20TM devices have a low on-resistance (Rdson) of approximately 8 milliohms. This makes them suitable for applications that require efficient power management. The device also offers excellent switching performance with a fast switching speed of 110 ns (nano-seconds). Furthermore, FQB10N20TM MOSFETs are known for their excellent reliability with a temperature range of -55 to +150 °C.

In terms of operation, FQB10N20TM MOSFETs are generally N-channel devices. That is, the current flows between the source and drain when the gate terminal is positively charged. The device is in the off-state when the voltage on the gate terminal is zero. When the gate is biased, the drain-to-source current (ID) will be proportional to the gate-to-source voltage (VGS).

Besides the voltage and the current, FQB10N20TM MOSFETs also feature a capacitance at the gate-to-drain junction (CGD). This is the electrostatic charge that accumulates on the gate when there\'s a difference in potential between the source and the drain. This capacitance affects the response time of the device and should be taken into consideration when designing the application.

The FQB10N20TM MOSFET is an ideal device for a variety of applications, especially due to its low power consumption, low on-resistance, and excellent switching performance. It is a reliable and efficient solution for many power management applications, as well as for logic-level functions. Furthermore, its temperature range of -55 to +150 °C makes it suitable for a wide range of circumstances.

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