FQB13N10TM

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FQB13N10TM transistors refers to the power MOSFET device from Infineon Technologies AG, specifically designed for applications like motor control, power supplies, audio power amplifiers etc. It has properties like single redirection N channel, voltage withstand capability of 600V, high current transfer ratio, and maximum device power dissipation of up to 100 watts.

The internal structure of the FQB13N10TM transistor device is quite similar to a normal MOSFET device, but with an added advantage of its much higher current transfer ratio. It is a self-biased device with an on- voltage rating of approximately 8 volts. The device is also able to withstand 600 volts, which is necessary in many motor control applications.

When it comes to application field and working principles, FQB13N10TM transistors offer a wide range of functionalities in the power electronics applications. They provide the best and the most efficient way of controlling current flow, thanks to their single redirection properties. Due to the high voltage rating and wide controllable current range, they are most commonly used in applications like motor control, power supplies, and audio power amplifiers, and other areas that require high power handling capability.

The major advantage of using FQB13N10TM transistors for such applications is their low on-voltage rating, which reduces conduction losses and improves the overall efficiency of systems using it for power control. Besides, the robust construction of the device ensures reliable and consistent performance in a wide range of operating conditions.

To summarize, FQB13N10TM type transistors are designed to offer the best performance when used for motor control, power supplies, and audio power Amplifiers applications due to their single redirection properties, wide controllable current range, and high voltage rating. The low on-voltage rating of the device guarantees high efficiency, and robust construction ensures long lasting and reliable performance in any kind of operating environment.

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