FQB12P10TM

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The FQB12P10TM is a N-Channel Enhancement Mode Field Effect Transistor (FET) that utilizes Magnum\'s patented field platform to create a high-performance single-level FET with excellent characteristics. With an RDS(on) of 10 milliohms, the FQB12P10TM provides very low drain-source on-resistance for efficient power delivery. The FQB12P10TM also features a very low gate charge (19 nC typical) and a low total gate charge of 11 nC. The device is capable of up to 10 Amps of continuous drain current, with a package temperature range of -55 to +175 degrees Celsius.

The FQB12P10TM is designed for a variety of markets and applications, including consumer electronics, power regulation, automotive and medical equipment. For example, its use in consumer electronics enables improved operation efficiency, with lower total power losses, while its use in automotive applications helps facilitate increased safety and reliability requirements. Additionally, the FQB12P10TM\'s low parasitic switch delays improve the performance of consumer electronics, increasing their operating efficiency. In medical equipment, the FQB12P10TM helps simplify device design by replacing multiple components with a single bipolar transistor.

The FQB12P10TM works by passing current from its drain-source junction to its drain port when a positive voltage is applied to its gate terminal. When the gate voltage rises above its threshold voltage, the N-channel of the MOSFET is opened, allowing current to flow from the source to the drain. As the gate voltage increases, the current (ID) increases, and thus the total drain-source on-resistance (RDS(on)) decreases. As the gate voltage continues to increase, the RDS(on) eventually reaches its minimum value.

When the gate voltage is turned off, the N-channel closes, blocking the flow of current and the FQB12P10TM is off. The FQB12P10TM can be switched on and off with a logic signal or an analog voltage. The device has a very fast switching time (typically as fast as 5 nanoseconds) and can be used in applications that require high-speed switching and low milliohm on-resistance. Thus, the FQB12P10TM is an ideal choice for consumer electronics and other applications that require lighting-fast switching and low on-resistance.

In summary, the FQB12P10TM is a high-performance, low milliohm, N-Channel Enhancement Mode Field Effect Transistor (FET) with a wide range of applications. Its low on-resistance and fast switching times make it an ideal choice for consumer and automotive electronics, as well as medical equipment. Its use simplifies device design by replacing multiple components with a single device, helping to improve power efficiency, reduce power losses, and increase reliability.

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